VLIN1616-02G-E3-18 Circuit Protection |
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Allicdata Part #: | VLIN1616-02G-E3-18-ND |
Manufacturer Part#: |
VLIN1616-02G-E3-18 |
Price: | $ 0.05 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 16V 33V SOD323 |
More Detail: | N/A |
DataSheet: | VLIN1616-02G-E3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04234 |
Series: | -- |
Part Status: | Active |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 16V (Max) |
Voltage - Breakdown (Min): | 17.1V |
Voltage - Clamping (Max) @ Ipp: | 33V |
Current - Peak Pulse (10/1000µs): | 6A (8/20µs) |
Power - Peak Pulse: | 200W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 18pF @ 1MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
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TVS (Transient Voltage Suppression) Diodes are a type of semiconductor device designed to protect components and circuits from physical damages caused by voltage variances.
The VLIN1616-02G-E3-18 is a diode within this range and is an unidirectional, two-terminal device that has a working voltage of 18V. It is primarily designed to protect electrical components from transient phenomena that are caused by lightning and inductive switching. It does this by clamping the voltage waveform as soon as its threshold voltage is exceeded.
Applications
VLIN1616-02G-E3-18 is used in a variety of high power applications such as automotive, telecom, AC adapters, power supplies and LED lighting. It also finds application in audio, video, data processing, as well as medical and industrial equipment. Some of the advantages its application brings are that it offers protection to ICs, FETs, semiconductors, and other electrical circuitry against transient over-voltages. It also has low leakage current, low clamping voltages, tight tolerances and is highly reliable.
Working Principle
VLIN1616-02G-E3-18 consists of a diode that consists of two layers of PN junctions. This semiconductor is packed in a TO-226AA package. The unique design of the p-n junctions of the diode enables it to operate in several different modes. When a switching transient goes higher than the breakdown voltage of the diode, it begins to change into a state known as avalanche mode.
When in avalanche mode, device carriers flow in such a way that the breakdown voltage will no longer be exceeded. It also acts as a current limiter in this state by ensuring that no current will be drawn from the circuit. The diode will remain in the avalanche mode of operation as long as the voltage stays within the breakdown voltage range.
In the event the surge current exceeds the peak pulse current rating of the diode, it will transition to an open circuit state. This state causes a large voltage drop across the diode, limiting the transient surge current. If this happens, the device will go back into the avalanche mode of operation as soon as the surge current drops below the peak pulse current rating.
In the event that the surge current exceeds the peak pulse current rating for an extended period of time, the device will reach its minium reset voltage and enter a third state known as short circuit mode. In this state, the diode’s resistance is near zero and it is no longer capable of limiting current, however, the device will remain in the short-circuit mode until the transient surge is over.
Conclusion
VLIN1616-02G-E3-18 is a diode within the TVS (Transient Voltage Suppression) Diodes range. It is primarily used to protect electrical circuits against transient over-voltages and finds application in various high power applications. Its working principles are based on the unique design of its PN junction structure, which enables it to operate in three different modes, namely, avalanche, open circuit and short circuit.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VLIN26A1-03G-E3-18 | Vishay Semic... | 0.04 $ | 1000 | TVS DIODE 26.5V 50V SOT32... |
VLIN1616-02G-E3-08 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 16V 33V SOD323 |
VLIN1616-02G-E3-18 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 16V 33V SOD323 |
VLIN26A1-03GHE3-08 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 26.5V 50V SOT32... |
VLIN26A1-03GHE3-18 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 26.5V 50V SOT32... |
VLIN1616-02GHE3-08 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 16V 33V SOD323 |
VLIN1616-02GHE3-18 | Vishay Semic... | 0.05 $ | 1000 | TVS DIODE 16V 33V SOD323 |
VLIN1626-02G-E3-18 | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 16/26.5V 33/50V... |
VLIN1626-02GHE3-18 | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 16/26.5V 33/50V... |
VLIN2626-02G-E3-18 | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 26.5V 50V SOD32... |
VLIN2626-02GHE3-18 | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 26.5V 50V SOD32... |
VLIN1626-02G-E3-08 | Vishay Semic... | 0.06 $ | 1000 | TVS DIODE 16/26.5V 33/50V... |
VLIN2626-02G-E3-08 | Vishay Semic... | 0.07 $ | 9000 | TVS DIODE 26.5V 50V SOD32... |
VLIN1626-02GHE3-08 | Vishay Semic... | 0.07 $ | 1000 | TVS DIODE 16/26.5V 33/50V... |
VLIN2626-02GHE3-08 | Vishay Semic... | 0.07 $ | 1000 | TVS DIODE 26.5V 50V SOD32... |
VLIN26A1-03G-E3-08 | Vishay Semic... | 0.05 $ | 12000 | TVS DIODE 26.5V 50V SOT32... |
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