VN7010AJTR Integrated Circuits (ICs)

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1. Describe

The device is a single-channel high-side driver fabricated using ST's proprietary VIPower® M0-7 technology, packaged in a PowerSSO-16. The device is designed to drive 12 V automotive ground loads via a 3 V and 5 V CMOS compatible interface for protection and diagnostics. The device integrates advanced protection features such as load current limiting, active overload management through power limiting, and thermal shutdown with configurable latch-off. A FaultRST pin unlocks the output in the event of a fault or disables the latch function. Dedicated multi-function multiplexed analog output pins provide sophisticated diagnostic functions, including high-accuracy proportional load current sensing, supply voltage feedback, and die temperature sensing, as well as overload and short-to-ground, short-to-VCC, and off-state open load detection. An enable pin allows disabling shutdown state diagnostics and sharing an external sense resistor between similar devices during module low-power modes.

2. Features

    1. Automotive qualified

    2. General

        − Single channel smart high-side driver with MultiSense analog feedback

        − Very low standby current

        − Compatible with 3 V and 5 V CMOS outputs

    3. MultiSense diagnostic functions

        − Multiplexed analog feedback of: load current with high precision proportional current mirror, VCC supply voltage and TCHIP device temperature

        − Overload and short to ground (power limitation) indication

        − Thermal shutdown indication

        − OFF-state open-load detection

        − Output short to VCC detection

        − Sense enable/disable

    4. Protections

        − Undervoltage shutdown

        − Overvoltage clamp

        − Load current limitation

        − Self limiting of fast thermal transients

        − Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin

        − Loss of ground and loss of VCC

        − Reverse battery with external components

        − Electrostatic discharge protection

3. Pin configuration

4. Pin Description

5. Applications

    1. All types of Automotive resistive, inductive and capacitive loads

    2. Specially intended for Automotive Headlamps

6. Power limitation

The basic working principle of this protection consists of an indirect measurement of the junction temperature swing ΔTj through the direct measurement of the spatial temperature gradient on the device surface in order to automatically shut off the output MOSFET as soon as ΔTj exceeds the safety level of ΔTj_SD. According to the voltage level on the FaultRST pin, the output MOSFET switches on and cycles with a thermal hysteresis according to the maximum instantaneous power which can be handled (FaultRST = Low) or remains off (FaultRST = High). The protection prevents fast thermal transient effects and, consequently, reduces thermo-mechanical fatigue.

7. Thermal shutdown

In case the junction temperature of the device exceeds the maximum allowed threshold (typically 175°C), it automatically switches off and the diagnostic indication is triggered. According to the voltage level on the FaultRST pin, the device switches on again as soon as its junction temperature drops to TR (FaultRST = Low) or remains off (FaultRST = High).

8. Current limitation

The device is equipped with an output current limiter in order to protect the silicon as well as the other components of the system (e.g. bonding wires, wiring harness, connectors, loads, etc.) from excessive current flow. Consequently, in case of short circuit, overload or during load power-up, the output current is clamped to a safety level, ILIMH, by operating the output power MOSFET in the active region.

9. Negative voltage clamp

In case the device drives inductive load, the output voltage reaches a negative value during turn off. A negative voltage clamp structure limits the maximum negative voltage to a certain value, VDEMAG, allowing the inductor energy to be dissipated without damaging the device.

10. Diode (DGND) in the ground line

A resistor (typ. RGND = 4.7 kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.