VTVS9V4ASMF-M3-08 Allicdata Electronics
Allicdata Part #:

VTVS9V4ASMF-M3-08-ND

Manufacturer Part#:

VTVS9V4ASMF-M3-08

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 9.4V 14.9V DO219AB
More Detail: N/A
DataSheet: VTVS9V4ASMF-M3-08 datasheetVTVS9V4ASMF-M3-08 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
30000 +: $ 0.05821
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: TransZorb®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 9.4V
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 14.9V
Current - Peak Pulse (10/1000µs): 25.48A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 1130pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Description

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TVS (Transient Voltage Suppressor) diodes are an essential form of semiconductor protection devices, for safeguarding sensitive electronics against damaging induced voltage transients. The VTVS9V4ASMF-M3-08 is a silicon avalanche TVS diode with integrated dynamic clamping, designed to protect high-speed data lines against electrical overstress (EOS). Developed for use in computing and communications applications, the device helps to prevent permanent damage to operational circuitry by suppressing unwanted high intensity over-voltage transients.

The diode’s small size ensures that it fits into the smallest of applications, while its low capacitance of only 0.15pF at 4V makes it perfectly suited for applications involving high-speed data lines. The ultra-high surge capability of up to 10kA (8/20 μs pulse) helps to further safeguard circuitry against the most intense voltage spikes.

The TVS diode’s avalanche technology and integrated dynamic clamping ensure incredibly fast response time, with an IEC 61000-4-5 margin of only 94nanoseconds. The device works extremely quickly to reduce induced voltages, protecting connected components from any EOS events. The VTVS9V4ASMF-M3-08 offers excellent linearity and high levels of surge voltage clamping even at low temperature.

The device also has an operating temperature range of -55° to 125°C, and an available storage temperature range of -55° to 150°C. This makes it well suited to a wide variety of applications, including consumer electronics, automotive electronics, industrial equipments, and communication systems. It is also available in a variety of packages.

The VTVS9V4ASMF-M3-08 works using a unique design that includes a Schottky diode with a N-channel power MOSFET. When an EOS event occurs, the MOSFET conducts current, allowing the high transient voltage to be discharged, thus protecting the connected circuits from damage. The Schottky diode functions to prevent any transient currents from entering the circuits.

In summary, the VTVS9V4ASMF-M3-08 is a highly reliable device, offering excellent protection against electrical overstress (EOS) in a wide variety of applications. Its small size, ultra-high surge capability, and incredibly fast response time makes it an ideal solution for many demanding applications. With its wide operating and storage temperature range, it is also suitable for use in extreme operating conditions.

The specific data is subject to PDF, and the above content is for reference

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