VTVS52GSMF-HM3-08

Voltage - Clamping (Max) @ Ipp:	89V
Supplier Device Package:	DO-219AB (SMF)
Package / Case:	DO-219AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	242pF @ 1MHz
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	4.41A
Series:	Automotive, AEC-Q101, TransZorb®
Voltage - Breakdown (Min):	60.76V
Voltage - Reverse Standoff (Typ):	52.2V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction on TVS-DiodesTransient Voltage Suppressor Diodes (TVS-Diodes) are specific semiconductor diodes that help to prevent against the effects of electrical transients. Transients are sudden and irregular instantaneous changes in voltage that occur in the normal course of operation, and can be caused by several factors including lightning, spikes of inductive energy, and electrostatic discharges (ESD). TVS diodes have been widely used in power, automotive, and other electronic applications because of their fast actively-controlled circuitry to quickly dissipate any surge or electromagnetic interference (EMI).VTVS52GSMF-HM3-08 Application Field and Working PrincipleThe VTVS52GSMF-HM3-08 is a 52V bidirectional transient voltage suppressor diode designed for use in ESD, surge, and EMI protection applications. It is suitable for systems with a nominal voltage of 35V to 60V, and is rated to withstand up to 20A of current. It has a low capacitance of 0.2pF, making it ideal for high-speed data lines.The VTVS52GSMF-HM3-08 utilizes a zinc-oxide semiconductor structure to clamp and dissipate the transient voltage. In normal operation, the voltage across the device is less than the breakdown voltage, and no current flows through the TVS diode. When the voltage exceeds the breakdown voltage, it is clamped and the device conducts current to divert any excess energy and protect the system from overvoltage transients. The amount of energy the device can absorb depends on its peak pulse power and standoff voltage specifications.The device is constructed with a moldable thermoplastic material and features an internal heat spreading element to ensure even distribution of heat. It also provides EMI shielding to reduce interference and reduce the need for additional EMI components.In summary, the VTVS52GSMF-HM3-08 is a 52V bidirectional transient voltage suppressor diode with a low capacitance of 0.2pF, and is suitable for high-speed data. It features a zinc-oxide semiconductor structure to quickly divert and dissipate transient voltage, and a heat spreading element to reduce temperature as needed. It also provides EMI shielding to reduce unnecessary interference.

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