Allicdata Part #: | VWM200-01P-ND |
Manufacturer Part#: |
VWM200-01P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 100V 210A V2 |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210... |
DataSheet: | VWM200-01P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 210A |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 430nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | V2-PAK |
Supplier Device Package: | V2-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
VWM200-01P is a high performance dual array MOSFET transistor designed for use in automobile and similar applications. It is highly stable and is ideal for use in power devices, low noise high frequency applications, military and aerospace applications and any demanding application where reliable power handling is required.
The VWM200-01P is a high performance MOSFET dual array structure with independent gates for each power MOSFET. The independent gate structures provide better performance and greater flexibility in design than traditional dual array MOSFETs. The independent gates allow for improved performances in a variety of conditions such as lower power losses and higher operating temperatures.
The VWM200-01P is designed to operate in a variety of applications as a reliable, efficient and durable power device. In the automotive industry, it is primarily used in powertrain control, power modules and engine control systems. It is also well suited for use in consumer electronic applications such as motorsport control systems and other electronic control systems. The VWM200-01P is highly reliable in demanding applications and is designed for use in applications ranging from relatively low voltage to higher voltage ranges.
The VWM200-01P provides flexibility and greater control of the power device. It offers independent gate control for each power MOSFET and is designed for use in multiple voltage applications. The multiple K cells provide for the flexibility and control. The gate control for each K cell is independent and all power devices can be controlled separately. This provides the user with the ability to adjust the power requirements to match their application.
The VWM200-01P provides efficient operation due to its low power consumption and excellent thermal dissipation. It is highly stable and offers superior levels of power handling while also providing a high level of safety due to its short circuit blocking and thermal shutoff capabilities. Additionally, it is RoHS compliant and can operate in a wide temperature range.
The working principle of the VWM200-01P is based on an internal charge pump and gate control that allows the device to efficiently manage and regulate the flow of power with minimal losses. It utilizes advanced circuitry to regulate the device\'s gate charge, making it highly stable under a variety of conditions. This ensures that the device is able to meet its target power requirements reliably and consistently.
The VWM200-01P is an excellent choice for a variety of applications due to its advanced design, reliable performance and excellent power handling capabilities. With its low power consumption and wide operating temperature range, it is well suited for demanding applications that require high performance and reliable operation. It is a powerful and reliable choice for applications ranging from military and aerospace applications to consumer electronics and automotive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VWM200-01P | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 100V 210A V2... |
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