VWM270-0075X2 Allicdata Electronics
Allicdata Part #:

VWM270-0075X2-ND

Manufacturer Part#:

VWM270-0075X2

Price: $ 84.88
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 75V 270A V2-PAK
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 75V 270A...
DataSheet: VWM270-0075X2 datasheetVWM270-0075X2 Datasheet/PDF
Quantity: 1000
6 +: $ 77.15610
Stock 1000Can Ship Immediately
$ 84.88
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 270A
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK
Supplier Device Package: V2-PAK
Description

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The VWM270-0075X2 is a field-effect transistor array that contains two power MOSFETs, each of which has separate top and bottom drain-source connectors. It features wide input and output side terminals, low on-resistance and good off-switch time for high-speed switching. This type of transistor array is mainly used in power management and control applications, such as digital signal processing circuits and motor control systems.

The working principle of the VWM270-0075X2 is based on the principle of field effect transistors (FETs). In FETs, voltage determines the current flow, as opposed to current flow determining voltage as in bipolar transistors. In this type of transistor array, there are two separated N-Channel and P-Channel transistors, each with its own drain side connected to the gate side, and the source side connected to the body (or substrate). As the voltage on the gate side rises, electrons are repelled from the substrate and gathered at the drain side. This creates a conducting path from the drain side to the source side, enabling current to flow. By controlling the voltage on the gate side, the amount of current that passes through the transistor can be accurately controlled.

The VWM270-0075X2 has a wide operating voltage range of 8 to 40 V and a maximum continuous channel on-state resistance of 75 mΩ, making it an ideal choice for power management and control applications that require high-speed switching. It is also very efficient, as its low input and output capacitance allows it to work faster and more accurately than other types of transistor arrays.

The VWM270-0075X2 has a low-threshold voltage, making it suitable for use in applications requiring high-speed switching, such as digital signal processing circuits and motor control systems. Furthermore, its on-resistance is relatively low, making it more efficient than other types of transistors, as less power is lost during switching.

In summary, the VWM270-0075X2 is a field-effect transistor array that is suitable for power management and control applications due to its wide input and output side terminals, low on-resistance, and good off-switch time. With its low-threshold voltage and low input and output capacitance, it can be used in a variety of digital signal processing circuits and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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