W25Q128FVSIF Allicdata Electronics
Allicdata Part #:

W25Q128FVSIF-ND

Manufacturer Part#:

W25Q128FVSIF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 128M SPI 104MHZ 8SOIC
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 104MHz ...
DataSheet: W25Q128FVSIF datasheetW25Q128FVSIF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SpiFlash®
Packaging: Tube 
Part Status: Discontinued at Digi-Key
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Description

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The W25Q128FVSIF is a Flash memory device manufactured by Winbond Corporation from Taiwan. It is used in a variety of applications, including automotive, consumer electronics, networking, and computer systems. The device uses high-performance non-volatile memory technology, making it ideal for storing programs, storing data, and retrieving information quickly and reliably.

The W25Q128FVSIF is organized as 8M bits. It is available through a standard 8-pin SOIC package or a 8-pin SOIC package with a low-profile option. It has a unique feature set, offering Flash memory read access time of 25ns, write access time of 60ns, and erase time of 2.3 seconds.

The device also features a wide operating voltage range of 1.8V to 3.6V and a low-power mode that supports a minimum standby current of 0.2mA. The W25Q128FVSIF also offers a maximum operating frequency of 100MHz, making it an excellent choice for applications requiring the fastest possible performance. In addition, the device has an integrated hardware high-speed erase feature that erases all data in the device in a matter of seconds.

The W25Q128FVSIF is a non-volatile memory ic (NVM), which means it retains data even when power is removed from the device. This is done by storing data in resistive memory cells, which are small memory transistors on the device. These transistors are then written to and read from by voltage pulses sent to the device.

Data can be stored and retrieved from the device using the device\'s three main commands, write, read, and erase. The write command sends data to the memory cell, which is then stored and the data bit is logically inverted. The read command retrieves data bits from the memory cell, while the erase command erases all data stored in that particular memory cell.

In addition to its main features, the W25Q128FVSIF also features error- correcting code (ECC) technology, which helps to protect data integrity, and a configurable memory controller to optimize system performance. The device also features lockable sectors, which allows users to protect sensitive data from unauthorized access.

The W25Q128FVSIF is a powerful, yet economical solution for various applications, ranging from consumer electronics and automotive systems to networking and industrial applications. With its low-power, wide operating voltage range and quick erase times, the W25Q128FVSIF is perfect for applications where fast data access and reliable data storage are required.

The specific data is subject to PDF, and the above content is for reference

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