
W25Q64FVSF00 Integrated Circuits (ICs) |
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Allicdata Part #: | W25Q64FVSF00-ND |
Manufacturer Part#: |
W25Q64FVSF00 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 64M SPI 104MHZ 16SOIC |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8) SPI 104MHz 16... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SpiFlash® |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOIC |
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W25Q64FVSF00 application field and working principle
Memory is one of the essential components for device operation. W25Q64FVSF00, a 8 megabit (1 megabyte) Serial Flash memory, is a full-featured and cost-effective one designed for use in a wide variety of product applications. It belongs to the category of NOR Flash Memory, and provides durability and performance required for embedded applications.
Overview of W25Q64FVSF00
W25Q64FVSF00 is a 64Mbit serial Flash Memory device developed by Winbond Electronics using 65 nanometer (nm) floating gate technology. It\'s an ideal choice for a wide variety of applications. The device provides a low cost, non-volatile and durable solution with improved performance and low power consumption.
W25Q64FVSF00 includes a number of features that make it suitable for a wide range of applications, including 4Kb, 8Kb and 16Kb Uniform Sector Erase, Multi-Sector Erase, Program and Sector Protection, Security Protection with 128-bit encryption, and power down/sleep modes.
The device operates up to a maximum frequency of 104MHz and features 30mS write and erase times. It consumes very low power and is optimized for low-power applications. It is also available in packages from tiny 2mm x 3mm WSON to 64-pin VFBGA, making it an ideal choice for size- and cost-constrained embedded applications.
Features of W25Q64FVSF00
- Serial Peripheral Interface (SPI) protocol compatible.
- Full Duplex Communication.
- Individual/Multi-Block/Full-Chip Erase.
- Read/Program/Erase Status register.
- Read/Write status registers.
- Write protect options.
- Write in-progress signal.
- Write status register operation.
- Hardware Write Protection.
- Minimum write time.
- Supply Voltage range: 2.3V~3.6V.
- Very low operating current.
- Data retention: up to 20 years.
- Supports Multi-Byte write with single command.
- Supports content protection.
- Supports power saving modes.
W25Q64FVSF00 Application Fields
W25Q64FVSF00 is useful for consumer applications like mobile phones, cameras, MP3 players, PDAs and notebooks. It is also suitable for industrial applications, such as M2M (Machine to Machine) communications, consumer electronics, PCs, networking, automotive, medical and consumer applications. Besides, due to its outstanding programming and read speeds and superior reliability, this Serial Flash Memory is ideal for a variety of embedded applications.
Working Principle of W25Q64FVSF00
W25Q64FVSF00 NOR Flash Memory is designed to “read” digital data stored in its cells. Each cell stores a single bit of data. Each cell has two possible charge states, and the two states respectively represent digital 1 and 0. The read operation begins when the content of a row of cells is transferred into a shift register. If the Register address is specified, the desired cell output line can be selected by sending the cell address to the column gates. Once addressed, the charge on the floating gate of the cell being read is transferred to the First Output Transistor (Q1). The output voltage of Q1 is then buffered and sent to the output pad. After the cell contents are buffered, the output data is stable, and the cell reading operation is finished.
Data can be written to each cell with the write operation. During write, the selected cell float gate is charged until its threshold voltage is reached. When the cell’s threshold voltage is reached, the resistance of the transistor changes, allowing the write operation to complete.
W25Q64FVSF00 also provides erase operation. Full-Chips, Multi-Sector and Individual Sector Erase operations allow users to erase group or single bytes. After being erase, all the cells’ threshold voltage will restore to the original state.
Conclusion
W25Q64FVSF00 is a powerful and cost-effective Serial Flash memory device, providing an ideal non-volatile data storage solution for a wide range of product applications. The device can be used for read, write and erase operations, with good performance and low power consumption. W25Q64FVSF00 NOR Flash Memory is an ideal choice for size- and cost-constrained embedded applications.
The specific data is subject to PDF, and the above content is for reference
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