W25Q16JVZPIQ TR

Series:	SpiFlash®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	16Mb (2M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	3ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x5)

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Memory

W25Q16JVZPIQ TR is one of the most commonly used memory devices. It is a 16 megabit, 3.3 volt serial Flash memory device that offers a cost-effective and fast solution for non-volatile storage requirements. It is a low-density, three-wire serial Flash device which supports the Serial Peripheral Interface (SPI) protocol. The Serial Peripheral Interface Bus (SPI bus) is an industry-standard synchronous serial communication interface designed for efficient transfer of data from a host processor to any type of memory device.The W25Q16JVZPIQ TR is an SPI-compatible Flash memory with a maximum clock frequency of up to 20 MHz. It offers excellent single-level cell (SLC) performance and features an integrated 4-KByte instruction/data buffer for fast and secure data transfers. The memory can store up to 16 megabits of data, and can be used for a variety of applications.The W25Q16JVZPIQ TR can be used in a wide range of applications, such as embedded systems, industrial systems, commercial systems, storage systems, communications systems, and automotive systems. It can be used to store, program, and retrieve both data and executable code, as well as firmware and files, allowing users to easily develop and implement applications.The device is also ideal for electrically erasable programmable read-only memory (EEPROM) emulation and data retention which require reading, erasing, and programming at a high performance level. It can also be used in non-volatile memory applications such as system caches, BIOS, boot programs, and configuration settings.The W25Q16JVZPIQ TR has a self-timed write cycle, allowing for reliable programming without the need for additional software or external components. It also features a hardware data protection mechanism which helps to protect the stored data from accidental program or erase operations.The device is powered by a 3.3 volt voltage source, and has a high endurance rating of up to 100,000 program/erase cycles. It is ultra-reliable, with a TTL level logic interface, and a wide operating temperature range of -41°C to +85°C.In terms of its working principle, the W25Q16JVZPIQ TR is operated in an inherently non-volatile environment. This means that when power is removed, the stored data is retained, and no special methods are required to revive the memory. The device stores its data in Flash memory cells, which consist of two power transistors and a storage capacitor. The two transistors form a single storage cell, with the capacitor storing the small amount of charge necessary to represent the binary ‘1’ or ‘0’ bits of information.When the device is in write mode, the voltage on the transistor gates is adjusted, allowing a small amount of charge to enter the capacitor. This creates a current flow which either increases or decreases the initial magnetic charge, depending on the value of the data being written. Similarly, when the device is in read mode, the voltage on the transistors is controlled and the charge which had previously accumulated in the capacitor is read out.In summary, the W25Q16JVZPIQ TR is an excellent choice for a wide range of applications which require reliable, non-volatile data storage. It is an easy-to-use device which provides a cost-effective and fast solution for high-density memory applications. It is also capable of accurately performing read, write and erase operations, as well as high endurance data retention. Its operating temperature range, 3.3 volt source supply, and integrated 4-KByte data buffer make it a popular choice for use in embedded and industrial systems.

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