W25Q64BVSFIG Allicdata Electronics
Allicdata Part #:

W25Q64BVSFIG-ND

Manufacturer Part#:

W25Q64BVSFIG

Price: $ 5.42
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 64M SPI 80MHZ 16SOIC
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8) SPI 80MHz 16-...
DataSheet: W25Q64BVSFIG datasheetW25Q64BVSFIG Datasheet/PDF
Quantity: 1000
1 +: $ 5.41667
10 +: $ 4.69444
100 +: $ 3.79167
1000 +: $ 3.61111
10000 +: $ 3.43056
Stock 1000Can Ship Immediately
$ 5.42
Specifications
Series: SpiFlash®
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Description

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W25Q64BVSFIG is a high-performance nonvolatile memory product produced by United Microelectronics Corporation (UMC). It is a combination of two memories: NOR and NAND. The W25Q64BVSFIG can store 64M bytes of data and is used for various applications including personal computers, consumer electronics, automotive and industrial applications. The W25Q64BVSFIG is a high-speed nonvolatile memory combining NOR and NAND technologies using a nonvolatile flash cell as its memory medium. It provides fast random access with low power consumption, making it ideal for use in consumer electronics and industrial applications such as portable medical devices, wearables, and embedded industrial applications.

W25Q64BVSFIG has a wide temperature range of -40° C to +85° C and an automatic mapping algorithm that allows the device to read data at high speeds and predict future access patterns, resulting in exceptionally low power consumption. This improved feature set makes the W25Q64BVSFIG suitable for a variety of applications, including consumer electronics, automotive, and industrial applications.

The working principle of W25Q64BVSFIG is based on two types of memory: NOR and NAND. NOR memory is composed of an array of floating gate transistors, which store a binary bit of data each, and can be either programmed by a high voltage or erased using Fowler Nordheim tunneling. The electrical readout of a NOR memory is much faster than that of a NAND memory, and is also capable of higher data transfer rates. NAND memory, on the other hand, consists of an array of electrically isolated strings of floating gate transistors and access gates. NAND memory is much slower to read and program than NOR memory and is also prone to errors, but it is cheaper and has much higher storage capacity.

The W25Q64BVSFIG uses a combination of these two memories to give it a wide temperature range, fast access times, low power consumption and high capacity. The device is programmed by firing a special command called "Write Enable" that activates the internal programming circuitry. Then, data is written to the device using the Serial Peripheral Interface (SPI). During the programming process, the NOR and NAND blocks are simultaneously written with the same data, and the memory location is internally mapped to the NAND, NOR, or both based on the type of data to be written and the access pattern. The W25Q64BVSFIG is thus able to store the same data in different memory blocks depending on the requirement.

The W25Q64BVSFIG is a versatile memory solution with a broad range of applications in consumer electronics, computers, industrial and automotive applications. Its combination of NOR and NAND technologies provides rapid access to data as well as low power consumption, making it an excellent choice for powering portable and embedded applications. In addition, the W25Q64BVSFIG\'s wide temperature range and automatic mapping algorithm further enhance its performance and make it suitable for various applications where temperature and power are key concerns.

The specific data is subject to PDF, and the above content is for reference

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