W9725G8KB-25 TR

The W9725G8KB-25 TR Memory is used in a wide variety of applications where high-density nonvolatile memory storage is needed. It is a three-dimensional multi-layer stacked memory package with a single die of 16Mbits or 32Mbits of NAND Flash memory for a total memory capacity of 256Mbits or 512Mbits. This memory is capable of supporting large amounts of data storage with fast access times, making it ideal for use in audio/video applications, code storage in embedded systems, data storage in portable devices, and general-purpose memory storage.

The W9725G8KB-25 TR Memory utilizes a single supply voltage of 3.3 volts to operate, making it ideal for use in low power devices. The memory is packaged as a thin, small single package which offers an exceptional level of packing density. This eliminates the need for extra connections, reducing board space and cost. The memory is available in five packaging options that can be selected depending upon the specific application requirements.

The W9725G8KB-25 TR Memory features an I2C interface with a maximum data rate of 400Kbits/s, making it suitable for use in low power embedded systems. The I2C interface supports standard commands for reading and writing memory. The memory offers addressable read and write accuracy of two bytes, allowing for a higher level of accuracy when operating with external devices. The memory also features a convenient block erase for erasing large amounts of data quickly.

The W9725G8KB-25 TR Memory also offers advanced features like deep power down, programmable ready/busy signal, and write protect functions, making it suitable for a wide range of applications. The deep power down feature allows users to reduce the memory\'s current consumption to just 4uA. The programmable ready/busy signal can be used to signal an external device when the memory is ready for a new command. The write protect function can be used to prevent accidental erasure or overwriting of the memory.

The W9725G8KB-25 TR Memory utilizes advanced architecture and technology to provide reliable and efficient operation. Its error detection/correction (EDC) feature adds an extra layer of protection to the data stored in the memory. The EDC function works by comparing data against an algorithm stored in the memory to ensure that any errors or corruption during storage or transmission can be detected and the data can be corrected, reducing the possibility of data loss.

The W9725G8KB-25 TR Memory is capable of providing a long storage and data retention life of 10 years and more. The memory is also RoHS compliant, meeting the requirements for electronics made in Europe. Overall, the W9725G8KB-25 TR Memory offers an excellent solution for embedded systems and other applications requiring high-density nonvolatile memory with fast access times and reliable performance.