W972GG8JB-3 TR Allicdata Electronics
Allicdata Part #:

W972GG8JB-3TR-ND

Manufacturer Part#:

W972GG8JB-3 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 60WBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333...
DataSheet: W972GG8JB-3 TR datasheetW972GG8JB-3 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-WBGA (11x11.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction: W972GG8JB-3 TR is a type of memory employed in many applications ranging from embedded systems to industrial process control. The device consists of 32KBytes SRAM organized as 256K-bit on a single integrated circuit. It operates with a single supply voltage of 3.3V and is used as a low power, low cost and high speed memory solution.

Application Fields: W972GG8JB-3TR is commonly used in control systems where access times, low power consumption, high speed and low cost requirements can be met. It can be used in robotics, industrial process control, medical imaging and communications systems, among other applications. It also features a wide temperature range capabilities and reliability at both high and low temperatures, which makes it a viable option for mobile and outdoor applications as well.

Working Principle: W972GG8JB-3 TR functions as a static random access memory (SRAM) device, meaning that it can hold data in memory without being constantly powered, unlike dynamic random access memory (DRAM) devices. The device utilizes internal latches, which are transistor-based circuits that can be operated toggle, to store data. The value stored in a latch is determined by the voltage levels applied to its pins and can either be low (logic 0) or high (logic 1). Once set, the value stored in the latch remains there until changed. Data can be written to the W972GG8JB-3 TR SRAM via the ‘write’ operation, which will change the values stored in the latches corresponding with the particular address register in memory. The device also supports the ‘read’ operation, and will return the values stored in the memory latches at the corresponding address.

Advantages of W972GG8JB-3 TR: W972GG8JB-3 TR offers several advantages over similar memory chips, such as a high-speed access time of 150ns, low power consumption of 0.2mA, and a wide temperature range of -55 to +150°C. It also features low noise and high-reliability, making it suitable for applications requiring highly predictable operation, such as the control system of robots or industrial process controllers. Furthermore, W972GG8JB-3 TR features an extended data output (EDO) design, which allows for higher read access speeds than standard SRAMs and makes it easier to integrate into existing designs. Finally, the device also supports a multi-chip-select option, which allows multiple devices to be connected to the same bus, allowing for increased data throughput.

Conclusion: W972GG8JB-3 TR is a versatile memory chip that provides a high-performance, low power and low cost memory solution for various applications. With its extended data output design, wide temperature range and high-reliability, W972GG8JB-3 TR is the perfect memory solution for applications ranging from industrial process control to mobile and outdoor applications.

The specific data is subject to PDF, and the above content is for reference

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