Allicdata Part #: | W972GG8JB-18TR-ND |
Manufacturer Part#: |
W972GG8JB-18 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 2G PARALLEL 60WBGA |
More Detail: | SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 533... |
DataSheet: | W972GG8JB-18 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 2Gb (256M x 8) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 350ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-WBGA (11x11.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The W972GG8JB-18 TR device is a type of computer memory, which is basically a storage device for digital information. It is used for storing digital information within a computer or other electronic system. The W972GG8JB-18 TR is a Random Access Memory (RAM) chip, which can be used for basic memory applications such as holding a program while it is being executed.
The W972GG8JB-18 TR has a density of 64 megabits and an access time of 50 nanoseconds. It has 18 pins, including the power pin. This can be used to control the chip\'s power logic and to provide the data memory interface. It also supports several modes of operation, including burst, page and normal.
The W972GG8JB-18 TR operates on the principle of dynamic random access memory (DRAM) which uses capacitors as memory elements. A capacitor is a tiny device that stores an electrical charge. Each capacitor can store a single “bit” of information. The capacitors are arranged in arrays and each array contains a row and a column. To read the data from the array, the row and the column address of the data must be provided. This is done with the help of a set of transistors connected to the grid lines that divides the array into individual memory cells.
A CMOS (complementary metal-oxide-semiconductor) gate is used for operation which acts as a bridge between the row and the column. When the row and the column address lines are selected, it enables the internal row and column drivers and activate the row and the column in the matrix. This way the memory location is pointed and the data can be read or written.
The W972GG8JB-18 TR provides fast access time and excellent reliability. It is suitable for use in any application that requires high speed memory access or requires a large amount of data to be stored in a single chip. It has also been designed for use in applications that require real-time operation, such as robotics, industrial automation, telecommunication systems and medical equipment. The W972GG8JB-18 TR is a very versatile chip, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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W972GG6JB-3 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 84WBG... |
W972GG6JB-3I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 84WBG... |
W9725G6IB-25 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84W... |
W972GG6JB-3 | Winbond Elec... | -- | 1000 | IC DRAM 2G PARALLEL 84WBG... |
W972GG6JB-3I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 84WBG... |
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W972GG6JB25I | Winbond Elec... | -- | 1000 | IC DRAM 2G PARALLEL 84WBG... |
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W972GG8JB-25 | Winbond Elec... | -- | 1000 | IC DRAM 2G PARALLEL 60WBG... |
W972GG8JB-3 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60WBG... |
W972GG8JB-3I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60WBG... |
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W9725G8KB-25 TR | Winbond Elec... | 1.51 $ | 1000 | IC DRAM 256M PARALLEL 60W... |
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