W972GG6JB25I Allicdata Electronics
Allicdata Part #:

W972GG6JB25I-ND

Manufacturer Part#:

W972GG6JB25I

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 84WBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 20...
DataSheet: W972GG6JB25I datasheetW972GG6JB25I Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (11x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

In computing, memory is a form of data storage. It refers to physical components or devices of computers used to store information. It is one of the most essential components of a computer system since it allows a computer to hold data, instructions and information required to perform necessary processes. Memory can be divided into two main types, namely primary memory and secondary memory. Primary memory is the central storage unit of a computer, usually consisting of random-access memory (RAM) that a computer uses to perform its operations and store data temporarily, while secondary memory refers to the data that is not as quickly accessed as primary memory. Secondary memory consists of magnetic and optical storage devices, such as hard drives, tape drives and DVD-ROMs.

The W972GG6JB25I is an integrated memory module that combines DRAM and NAND flash memory, and offers superior performance for a variety of applications. The W972GG6JB25I module offers a capacity of up to 4GB of DRAM and up to 64GB of NAND flash memory, making it suitable for a wide range of applications, including both embedded and mobile applications. The module is compliant with the PCI Express specification and is RoHS compliant.

The W972GG6JB25I module is a cutting-edge memory device designed to provide both high speed and high storage capacity. The device combines both DRAM and NAND flash memory, providing users with the performance and flexibility of both. The combination of the two allows for faster access to data stored in the flash memory, while allowing for larger data sets to be stored in the DRAM. The module offers low latency, high bandwidth and low power consumption, making it suitable for a number of applications, such as embedded and mobile applications.

The working principle of the W972GG6JB25I module is simple. The module works by reading and writing data to and from the DRAM and NAND memory devices. The DRAM is designed to provide quick access to data stored, while the NAND flash is designed to provide larger capacity storage, as well as enable data retention even when the power is removed. When the processor wants to access data stored on the module, it will access the DRAM first, which will provide quicker access to the data. If the processor needs data that is stored in the NAND, then it will need to access it from the module, which will take longer than accessing the DRAM. The speed of the module will depend on the type of memory, access speed, and other factors.

The W972GG6JB25I module is suitable for a variety of applications, including embedded and mobile applications. The module offers fast access to data stored in the DRAM, as well as large capacity storage in the NAND. It features low latency and high bandwidth, as well as low power consumption, making it ideal for applications that require both storage and performance. The device is also compliant with the PCI Express specification, ensuring compatibility with a variety of systems.

The W972GG6JB25I module is a cutting-edge memory device designed to provide both high speed and high storage capacity. It combines both DRAM and NAND flash memory, offering fast access to data stored in the DRAM and large capacity storage in the NAND. It offers low latency, high bandwidth and low power consumption, making it suitable for a number of applications. The device is also compliant with the PCI Express specification, ensuring compatibility with a variety of systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "W972" Included word is 35
Part Number Manufacturer Price Quantity Description
W9725G6KB-25 TR Winbond Elec... 1.51 $ 1000 IC DRAM 256M PARALLEL 84W...
W9725G6KB-25 Winbond Elec... -- 543 IC DRAM 256M PARALLEL 84W...
W972GG6KB-25 Winbond Elec... -- 1000 IC DDR2 SDRAM 2GBIT 2.5NS...
W972GG8JB-18 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-3 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-3I TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG6JB-18 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB-3 TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB-3I TR Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W9725G6IB-25 Winbond Elec... 0.0 $ 1000 IC DRAM 256M PARALLEL 84W...
W972GG6JB-3 Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB-3I Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 84WBG...
W9725G6JB25I Winbond Elec... 0.0 $ 1000 IC DRAM 256M PARALLEL 84W...
W972GG6JB-18 Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB-25 Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG6JB25I Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 84WBG...
W972GG8JB-18 Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-25 Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-3 Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB-3I Winbond Elec... 0.0 $ 1000 IC DRAM 2G PARALLEL 60WBG...
W972GG8JB25I Winbond Elec... -- 1000 IC DRAM 2G PARALLEL 60WBG...
W9725G6KB-18 TR Winbond Elec... 1.51 $ 1000 IC DRAM 256M PARALLEL 84W...
W9725G8KB-18 TR Winbond Elec... 1.51 $ 1000 IC DRAM 256M PARALLEL 60W...
W9725G8KB-25 TR Winbond Elec... 1.51 $ 1000 IC DRAM 256M PARALLEL 60W...
W9725G6KB-18 Winbond Elec... -- 1000 IC DRAM 256M PARALLEL 84W...
W9725G8KB-18 Winbond Elec... 1.66 $ 1000 IC DRAM 256M PARALLEL 60W...
W9725G8KB-25 Winbond Elec... -- 1000 IC DRAM 256M PARALLEL 60W...
W9725G6KB25I TR Winbond Elec... 1.91 $ 1000 IC DRAM 256M PARALLEL 84W...
W9725G8KB25I TR Winbond Elec... 1.91 $ 1000 IC DRAM 256M PARALLEL 60W...
W9725G6KB25I Winbond Elec... -- 1000 IC DRAM 256M PARALLEL 84W...
W9725G8KB25I Winbond Elec... 2.11 $ 1000 IC DRAM 256M PARALLEL 60W...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics