X0203NA 1BA2

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Thyristors – SCRs include a range of semiconductor equipment used for switching purposes in which a heavily doped crystal bar of several layers is used. A key feature is the ability to trigger a device on or off when a predetermined voltage is exceeded or the application of a current pulse, and to then remain in the OFF or ON state until the influence of a voltage or current pulse overcomes the effects of the trigger to switch the device back again. The X0203NA 1BA2 device is part of the Thyristor – SCR family as it too, has a four-layer crystal bar and is available in different specifications so as to be employed for a variety of applications.

The package type of the XO203NA 1BA2 is a ceramic perforated envelope containing the four-layer bar composed of alternating layers between P and N type materials, and these layers are all connected in a cascaded arrangement. When the device is biased and a small pulse current is supplied through its gate, a high voltage pulse is initiated as this pulse current overcomes the forward junction threshold. As other junction thresholds are exceeded, the device continues its switching action and moves into the ON state. Thereafter, the device is held in the ON state until a voltage in the opposite direction exceeds the reverse junction threshold or a current pulse of equal magnitude is supplied, thus allowing the device to switch BACK to its original OFF position.

The XO203NA 1BA2 is suitable for applications that require an electrically controlled current or voltage supply, either for switching on or off purpose, with the ability to switch ON at a predetermined voltage and then remain in that ON position until an external control pulse switches it off, for example ISOLATORS used in electric switch boards, electrical circuits ON-OFF switching control etc. Furthermore, the XO203NA 1BA2 can also be utilized in resistive values, providing gate current decoupling, switch mode power supply and snubber applications.

XO203NA 1BA2 is best used with a reverse blocking voltage which is lower than the forward blocking voltage, and with a surge current which must exceed the voltage gap between the reverse and forward junction thresholds. The rated peak voltage will depend on the electrol element’s specifications, with the surge current and operating temperature influencing the rated gate current for the device. Additionally, anode current and gate current should be equal, allowing the device to stably operate in its ON state.

Another interesting feature of the XO203NA 1BA2 is its ability to respond to sudden voltage drops (for example, during a surge), by initiating a current in the opposite direction that allows re-biasing of the device and return to its ON state. In conclusion, the XO203NA 1BA2 is a transistor used for switching in a variety of applications, possessing fast acting, good isolation and temperature stability capabilities, making it suitable for a variety of applications once its specifications are taken into account.

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