XN09D5700L Allicdata Electronics

XN09D5700L Discrete Semiconductor Products

Allicdata Part #:

XN09D5700LTR-ND

Manufacturer Part#:

XN09D5700L

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 15V 2.5A MINI 6P
More Detail: Bipolar (BJT) Transistor PNP + Diode (Isolated) 15...
DataSheet: XN09D5700L datasheetXN09D5700L Datasheet/PDF
Quantity: 6000
3000 +: $ 0.20966
6000 +: $ 0.19521
Stock 6000Can Ship Immediately
$ 0.22
Specifications
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP + Diode (Isolated)
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 600mW
Frequency - Transition: 180MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: MINI6-G1
Series: --
Description

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XN09D5700L transistors, part of the Single Bipolar (BJT) family, are specialized transistors commonly used as amplifiers in a wide range of applications. The XN09D5700L is particularly notable for its high breakdown voltage and excellent voltage regulation characteristics. As such, the XN09D5700L can be used in amplifying audio signals, high-frequency amplifying and sampling circuits, power supplies, and other general circuit applications.

The basic structure of the XN09D5700L is composition of two main components, a collector and an emitter, separated by an active region, called a base. The collector and the emitter are connected by a conducting path, called a base-collector junction. The collector-base junction and the emitter-base junction form two separate p-n junctions. The collector-base junction is less susceptible to reverse breakdown and can withstand voltages up to 900V, while the emitter-base junction has a forward bias, allowing it to easily pass current.

The XN09D5700L transistor also features a low minimum operating voltage, which allows it to be used in low voltage circuits. The low voltage feature ensures the transistor can provide efficient signal transfer even in circuits operating at a lower voltage. Additionally, the transistor is optimized for high-speed operation and can handle high-frequency signals with minimal noise, distortion, and signal loss.

The working principle of the XN09D5700L is relatively simple. When a potential difference is applied across the collector-base junction, electrons and holes (collectively called charge carriers) flow across the junction into the base region. This forms a small current (the base current), which in turn stimulates the emitter to release electrons into the collector. This is known as the transistor action and is the core of the transistor’s operation.

The XN09D5700L’s application field is further defined by its structure. The XN09D5700L is well-known for its use in audio applications, where it amplifies signals with a minimum of distortion and noise. It is also well-suited for generating strong, reliable signals in high-frequency circuits, such as communication and networks, as well as in power-supply circuits. As a result, it is a popular choice for many audio and power-supply applications.

In conclusion, the XN09D5700L is a Single Bipolar (BJT) transistor noted for its high breakdown voltage, excellent voltage regulation capabilities, and low minimum operating voltage. It is optimal for amplifying audio signals, high-frequency amplifying, sampling circuits, and other general circuit applications. It works on a simple principle of allowing electrons and holes to cross over collector-base junction, providing a small amount of current in the process.

The specific data is subject to PDF, and the above content is for reference

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