XN09D6100L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP + Diode (Isolated)
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 15mA, 750mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 2V
Power - Max:	600mW
Frequency - Transition:	270MHz
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	MINI6-G1

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Bipolar Junction Transistors (BJTs) are a type of transistor that uses a combination of two p-type and n-type semiconductor materials to control a current flow from one side of the device to the other. One type is referred to as a single BJT and the other type is referred to as a double BJT. The model XN09D6100L is a single BJT.The XN09D6100L is a NPN type, can-style, surface-mount BJT with a collector current capacity (Ic) of 6A and Vce(sat) rating of 0.2V and HFE rating of 200. It operates with a collector-emitter voltage rating of 100V and a maximum junction temperature of 150 degrees Celsius. This device is well suited for a wide range of applications including, but not limited to, power amplifiers, switch-mode power supplies, switching regulators, fuel pumps and lighting applications.The BJT is a type of transistor that is composed of three layers – the base, collector and emitter. The base is made from a highly doped semiconductor material such as silicon or germanium, while the collector and emitter are made from different types of doped semiconductor materials. The collector and emitter layers are usually made from N-type and P-type material, respectively.In normal operation, the collector of a BJT is connected to the positive side of a power supply, while the emitter is connected to the negative side. The base of the device acts as a control connection and is typically biased using a resistor. A small current is then applied to the base, which causes a larger current to flow between the collector and emitter. This is known as the collector current (Ic) and it is controlled by the applied base current (Ib).The amount of current that flows through the collector is limited by the size of the base current and the gain (HFE) of the transistor. The XN09D6100L has a HFE rating of 200, meaning that it can be driven with a relatively small base current, resulting in an output current up to 200 times larger.The XN09D6100L is also well-suited for use in switching circuits, as it can handle the high-currents associated with these designs. Additionally, since the device is rated for up to a 100V collector-emitter voltage, it can be used for higher-power applications.In summary, the XN09D6100L is a single BJT with a collector current capacity of 6A and Vce(sat) rating of 0.2V and HFE rating of 200. It operates with a collector-emitter voltage rating of 100V and a maximum junction temperature of 150 degrees Celsius. This device is well suited for a wide range of applications including, but not limited to, power amplifiers, switch-mode power supplies, switching regulators, fuel pumps and lighting applications.

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