XN09D5800L Discrete Semiconductor Products

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The XN09D5800L is a single bipolar junction transistor (BJT) that is widely used in a variety of design applications. It is designed to have a low collector-emitter saturation voltage, allowing for higher frequency applications due to its excellent thermal stability and power handling capability. The XN09D5800L also has an outstanding breakdown voltage, allowing for improved performance in high-power applications. The device can be used in circuit designs for reduced noise and improved efficiency. In addition, the XN09D5800L is manufactured using a process that ensures high reliability.

The XN09D5800L has an emitter of 9.9 volts, a collector voltage of 20 volts, a base voltage of 9.2 volts, and a current gain of 0.51. The device features an operating temperature range of -65°C to 150°C and its maximum power dissipation is 8 watts. The device has a maximum junction temperature of 150°C and a maximum continuous current of 16 mA. The device also features a max storage temperature of 150°C.

The working principle of BJTs is based on the fact that current can flow through a semiconductor material when it is exposed to an electric field. As a result, when a forward biased voltage is applied to a BJT, the electrons in the base region are attracted to the n-type material, leaving a region depleted of electrons known as the depletion layer. The electrons from the base region are then able to cross the n-type material and enter the p-type region, creating a negative potential that acts like an electric field. This electric field attracts the holes in the p-type material to the base region, creating a current based off the voltage applied.

The base current is used to control the flow of current between the emitter and collector. As the voltage across emitter and collector increases, the base current is increased, allowing more current to flow between the emitter and collector. This relationship is known as the transistor’s current gain and is defined as the ratio between the collector current (Ic) and the base current (Ib). In applications, transistors are used to amplify signals, switch signals, and control electric power.

The XN09D5800L is used in many design applications, primarily those requiring high frequency and performance. In addition, its wide operating temperature range, low saturation voltage, and high breakdown voltage make it an excellent choice for high-power systems. The device is ideal for radio-frequency applications, Switch Mode Power Supplies (SMPS), and for power-control circuits in automotive and industrial applications.

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