XN0A31100L Discrete Semiconductor Products |
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Allicdata Part #: | XN0A31100LTR-ND |
Manufacturer Part#: |
XN0A31100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W MINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | XN0A31100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz, 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G1 |
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The XN0A31100L is a type of bipolar junction transistor array manufactured by Zetex Semiconductors. It is designed to be used as a pre-biased transceiver, which can be used to amplify signals and drive devices in signal processing applications. The device is made up of two NPN transistors and one Darlington pair.
The XN0A31100L is built using a through-substrate substrate, which makes it well-suited for applications that require heat dissipation and low latency. The substrate contains an integrated polyimide film and a silver-gated AlGaAs/GaAs MOS transistor as the active elements. This array is designed for low-voltage and low-power applications. It operates with a supply voltage of 3.3V and has a low-side operating temperature range of -40°C to +85°C.
The XN0A31100L has a maximum current gain of 210 and a maximum gate-source voltage of 26V. It has an ultra-low input capacitance of less than 1pF, which makes it suited for integrating into broadband applications. The transceiver has an integrated JFET input stage, which helps reduce the noise generated by the device. The device also has an integrated high-speed logic input stage, which can be used to drive devices such as memories, logic arrays, and communication links.
The XN0A31100L is used in a variety of applications, including RF communication systems, automotive electronics, medical instrumentation, and consumer electronics. In RF communication systems, it is used for receiving and transmitting signals. In automotive electronics, it is used in engine controls and for transmission controllers. In medical instrumentation, it is used for medical imaging systems. In consumer electronics, it is used for power amplifiers, converters, and modulators.
The XN0A31100L is a modern transceiver design, which provides a high level of performance and flexibility. As a pre-biased transceiver, the device can be used to increase the signal strength and reduce the noise generated by the device. The integrated JFET input stage helps reduce the device\'s noise profile, while the integrated high-speed logic input stage helps reduce latency. The device\'s through-substrate substrate also helps reduce the overall power consumption and improve heat dissipation. The XN0A31100L is an ideal solution for integrating into communications systems and a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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