XN0A31200L Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The XN0A31200L is primarily used in power and lighting applications. It is a Pre-Biased arrangement of BJT’s (Bipolar Junction Transistor) and is a part of a multiple junction array. The XN0A31200L array makes the task of creating an amplifier circuit easier, with only two DC bias settings, VBE, and IC. The VBE, or Base to Emitter voltage bias, determines the level of VCC, or collector to emitter supply voltage for the transistor, and the IC, or collector current bias, determines the output bias current. The XN0A31200L also features built in diodes and temperature compensation circuitry.

The principle of operation for the XN0A31200L is simple. Transistors have four terminals, the base, collector, emitter and a junction of the two. The Base terminal is used to introduce the electrical signal that will control the transistor; the collector terminal receives the amplified signal and the emitter is used to draw the current away from the circuit. In between the base and emitter terminal is a junction of two types of material. A thin layer of one material sandwiches a thick layer of another material. The junction creates an electrical field that holds current back from entering the base. The signal is amplified by increasing the voltage across the base to draw the current in, and increasing the current flowing out of the collector.

The XN0A31200L is used when a large signal gain is required to amplify the signal. The XN0A31200L is designed to be pre-biased, so that the base and emitter terminals have a preset voltage, and then the voltage across the collector-emitter (Vce) is adjusted to obtain the desired output. The XN0A31200L has two stages of bias for the collector current, allowing for greater amplification of the signal with minimal distortion. The VBE is the base-emitter voltage bias, which sets the voltage for the collector-emitter. The IC is the collector current bias, which sets the collector current.

The XN0A31200L also features built in diodes to protect the transistor from damage due to static charges and overheating. The XN0A31200L also offers temperature compensation, which reduces the amount of distortion caused by temperature related changes in the transistors characteristics. The XN0A31200L Pre-Biased array offers greater consistency and amplitude control than other single junction transistors, making it an excellent choice for many high power applications. It is commonly used in power supplies, amplifiers, and other high power applications.

In conclusion, the XN0A31200L is a Pre-Biased array of Bipolar Junction Transistors (BJT). It is designed to be easy to use, with only two DC bias settings, VBE and IC. It features built in diodes for protection, and temperature compensation circuitry for greater accuracy and consistency. The XN0A31200L is commonly used in power supplies, amplifiers, and other high power applications.

The specific data is subject to PDF, and the above content is for reference