XP0621100L Discrete Semiconductor Products |
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Allicdata Part #: | XP0621100LTR-ND |
Manufacturer Part#: |
XP0621100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XP0621100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SMINI6-G1 |
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Transistors are essential components of many electrical circuits, and most integrated chips contain various types of transistors. The XP0621100L is an array of pre-biased, bipolar junction transistors (BJTs). Arrays of BJTs are used as building blocks for complex logic circuits.
A BJT usually consists of two p-type semiconductor material layers and one n-type layer. The p-type layers are the collector and emitter regions and the n-type layer is the base region. Depending on the relative width of the base, a BJT can be classified as a NPN or PNP type. An array of pre-biased BJTs consists of multiple evenly spaced BJTs with the same type (NPN or PNP), connected together in a pre-biased manner. The BJTs are connected through a single set of base and emitter leads. The advantages of a pre-biased BJT array over other types of BJT circuits include reduced power consumption, better heat dissipation, and increased circuit density.
The XP0621100L is a low-voltage, pre-biased BJT array designed for use in digital logic applications. It is an NPN type array consisting of 10 evenly spaced transistors with a base width of 0.5 mm. Each transistor is pre-biased to provide a voltage drop between the base and collector terminals of 0.85 volts. This pre-biased voltage drop helps reduce the power consumption of the array and also helps increase the reliability of the circuit.
The XP0621100L is optimized for low-voltage digital logic circuits. It is typically used to drive logic levels from 0.8V to 5.5V, making it well suited for powering low-voltage logic gates, flip-flops, and counters. It can also be used in memory and analog circuits, where low input voltages are required. Since the transistor array is already pre-biased, it eliminates the need for external biasing components and reduces circuit complexity.
In addition to its enhanced power efficiency and reliability, the XP0621100L also provides superior heat dissipation compared to other BJT arrays. This improved thermal performance allows the array to operate at higher frequencies and with higher power levels. This makes it ideal for high-frequency communication and motion control applications.
The XP0621100L is a versatile pre-biased BJT array that is suitable for a wide range of digital logic, memory, and analog applications. It is easy to use, requires no external biasing components, and provides superior power efficiency and heat dissipation compared to other BJT arrays.
The specific data is subject to PDF, and the above content is for reference
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