ZMM5257B-7 Allicdata Electronics

ZMM5257B-7 Discrete Semiconductor Products

Allicdata Part #:

ZMM5257BDITR-ND

Manufacturer Part#:

ZMM5257B-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 33V 500MW MINIMELF
More Detail: Zener Diode 33V 500mW ±5% Surface Mount Mini MELF
DataSheet: ZMM5257B-7 datasheetZMM5257B-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Base Part Number: ZMM5257
Description

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The ZMM5257B-7 is a single Zener diode made by OSRAM Opto Semiconductors. It is designed to protect sensitive semiconductor components from overvoltage caused by inductive load switching or spikes of external origin. The ZMM5257B-7 is a valuable component for applications such as power supplies, motor controllers, and lighting control systems.

The ZMM5257B-7 is a three terminal device that features two terminals used for anode and cathode, and one terminal used as a neutral pin. It has a peak reverse breakdown voltage of 7.0V and a maximum forward current of 200mA. The diode also has a low forward voltage drop of 0.7V and a decent surge current of 600mA. The ZMM5257B-7 is rated for maximum power dissipation of 250mW, maximum reverse current leakage of 1uA, and maximum junction temperature of 150°C.

In terms of its application field, the ZMM5257B-7 can be used for a variety of circuit protection applications, including voltage regulation for rail switching, power stage switching, and current limiting applications. It can also be used as a voltage clamping device to protect sensitive semiconductor components from overvoltage caused by inductive load switching or spikes of external origin. The ZMM5257B-7 is also used in power supplies, motor controllers, and lighting control systems.

The working principle of the ZMM5257B-7 is based on the Zener breakdown phenomenon, in which the application of a reverse bias voltage to a p-n junction diode causes electrons and holes to be swept into different regions of the diode, creating a depletion region. When a certain voltage (called the breakdown voltage) is reached, the depletion region becomes so thin that the electric field built up within the layers of silicon exceeds the dielectric strength of the material, causing the electric field to break down and the diode to turn on. This produces a clamping effect that allows the diode to regulate an excess voltage, limiting it to a predetermined safe level.

To conclude, the ZMM5257B-7 is a single Zener diode designed to protect sensitive semiconductor components from overvoltage caused by inductive load switching or spikes of external origin. It is widely used in a variety of circuit protection applications due to its low forward voltage drop, decent surge current rating, and low reverse leakage current. The working principle behind the ZMM5257B-7 is that of the Zener breakdown effect; it is used to regulate an excess voltage, limiting it to a predetermined safe level.

The specific data is subject to PDF, and the above content is for reference

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