Allicdata Part #: | ZXGD3111N8TCDITR-ND |
Manufacturer Part#: |
ZXGD3111N8TC |
Price: | $ 0.85 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | IC MOSFET CTLR SYNCH 8SOIC |
More Detail: | High-Side or Low-Side Gate Driver IC 8-SO |
DataSheet: | ZXGD3111N8TC Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.76545 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | High-Side or Low-Side |
Channel Type: | Single |
Number of Drivers: | 1 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4 V ~ 20 V |
Current - Peak Output (Source, Sink): | 2A, 5A |
Input Type: | -- |
Rise / Fall Time (Typ): | 695ns, 131ns |
Operating Temperature: | -50°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The ZXGD3111N8TC is a PMIC (Power Management IC) gate driver, designed for driving a broad range of applications. The device has 8 channels with independent enable control and low quiescent current. It is suitable for driving high power loads such as MOSFETs or IGBTs up to 800V.
The ZXGD3111N8TC is designed to provide exceptional switching performance, and can operate in a wide variety of high-power applications, from motor and lighting control, to solar energy and power supply. Additionally, the device features programmable operating frequency up to 500kHz.
Besides the typical on- and off-state, the ZXGD3111N8TC can offer additional “off-state”: it can safely turn off the gate with a minimum gate-source voltage, to avoid accidental MOSFET/IGBT turn-on. Other features include adjustable deadtime injection and both positive and negative current detection output (capable of monitoring the parasitic diode conduction).
The operation of the ZXGD3111N8TC is based on two integrated circuits: a linear pre-driver and a high-side driver. The linear pre-driver provides a low voltage swing (1.2V to 3.3V) to detect the Gate drain connection and ensures low-level switching. The high side driver provides an active high voltage, up to 10V, to drive the MOSFET/IGBT gate. Both the pre- and high-side drivers are energized by an external bootstrap supply.
The ZXGD3111N8TC is built around a 6-bit linear regulator. It regulates its output based on the external reference voltage, delivering a maximum power savings of up to 75%. The device features an internal reseating control circuit, which switches the output voltage appropriately in response to the VDD overvoltage condition. It also provides an over-current protection at the drain pin.
The integrated protection circuitry of the ZXGD3111N8TC includes undersink and overload protection, open loop protection and low-side protection. The device is also equipped with temperature monitoring and over-temperature protection. Additionally, the device offers an electronic ESD protection to avoid any undesired heavy loads. All together, these features make the ZXGD3111N8TC the perfect choice for industrial, automotive and consumer applications that require safe and reliable power conversion.
The ZXGD3111N8TC is designed to meet the needs of a wide range of applications. It features a low gate turn-on time and low quiescent current, which makes it suitable for driving high-power loads up to 1000V. Furthermore, the device features an adjustable deadtime injection, adjustable switching frequency and an accurate and programmable current sensing, which makes the device ideal for power supply, motor and lighting control, solar energy and industrial automation applications.
The specific data is subject to PDF, and the above content is for reference
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