Automotive amplifier module - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-13167-2-ND	STL7DN6LF3	STMicroelectronics	View more Series: Automotive, AEC-Q101, STripFET III Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Power - Max: 52W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat (5x6) Base Part Number: ST*7DN	1000 Order	3000+: $0.4108
IPG20N06S415ATM A1-ND	IPG20N06S415ATM A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	1000 Order	--
DMGD7N45SSD-13- ND	DMGD7N45SSD-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Power - Max: 1.64W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	2500+: $0.4596
MKE38P600TLB-TR R-ND	MKE38P600TLB-TR R	IXYS	View more Part Status: Active Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD.B	1000 Order	1+: $24.6267
MKE38P600TLB-ND	MKE38P600TLB	IXYS	View more Part Status: Active Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD.B	1000 Order	1+: $24.6267
MMIX2F60N50P3-N D	MMIX2F60N50P3	IXYS	View more Series: HiPerFET, Polar3 Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Power - Max: 320W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD Module, 9 Leads Supplier Device Package: 24-SMPD	1000 Order	20+: $20.3729
APTC60TAM21SCTP AG-ND	APTC60TAM21SCTP AG	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 116A Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 3.6V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V Power - Max: 625W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	1000 Order	100+: $166.065
MCB40P1200LB-ND	MCB40P1200LB	IXYS	View more Series: CoolMOS Part Status: Active FET Type: 2 N-Channel (Dual) Common Source FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 58A Mounting Type: Surface Mount Package / Case: 9-SMD Power Module Supplier Device Package: SMPD	1000 Order	10+: $130.585
APTMC120AM08CD3 AG-ND	APTMC120AM08CD3 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 250A Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V Power - Max: 1100W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	19 Order	1+: $0.63
APTC60AM242G-ND	APTC60AM242G	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module	1000 Order	100+: $37.0202
APTMC120AM16CD3 AG-ND	APTMC120AM16CD3 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 131A Rds On (Max) @ Id, Vgs: 20 mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V Power - Max: 625W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	1000 Order	100+: $328.176
APTM100TA35SCTP G-ND	APTM100TA35SCTP G	Microsemi Corporation	View more Series: POWER MOS 7 Packaging: Bulk Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	1000 Order	100+: $169.29
19MT050XF-ND	19MT050XF	Vishay Semiconductor Diodes Division	View more Series: HEXFET Packaging: Bulk Part Status: Obsolete FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 31A Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V Power - Max: 1140W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: 16-MTP	1000 Order	1+: $0
FPF1C2P5BF07A-N D	FPF1C2P5BF07A	ON Semiconductor	View more Packaging: Tray Part Status: Active FET Type: 5 N-Channel (Solar Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 36A Rds On (Max) @ Id, Vgs: 90 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250A Power - Max: 250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: F1 Module Supplier Device Package: F1	103 Order	1+: $45.5112 10+: $43.2356
APTSM120AM08CT6 AG-ND	APTSM120AM08CT6 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 370A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V Power - Max: 2300W Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $422.72
APTSM120AM25CT3 AG-ND	APTSM120AM25CT3 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 148A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V Power - Max: 937W Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	1000 Order	100+: $169.156
APTSM120AM55CT1 AG-ND	APTSM120AM55CT1 AG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 74A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V Power - Max: 470W Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	1000 Order	100+: $89.4943
APTSM120TAM33CT PAG-ND	APTSM120TAM33CT PAG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 112A (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V Power - Max: 714W Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $383.897

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