MKE38P600TLB Allicdata Electronics
Allicdata Part #:

MKE38P600TLB-ND

Manufacturer Part#:

MKE38P600TLB

Price: $ 27.09
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: Mosfet Array 600V 50A (Tc) Surface Mount ISOPLUS...
DataSheet: MKE38P600TLB datasheetMKE38P600TLB Datasheet/PDF
Quantity: 1000
1 +: $ 24.62670
Stock 1000Can Ship Immediately
$ 27.09
Specifications
Series: --
Part Status: Active
FET Type: --
FET Feature: --
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B
Description

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MKE38P600TLB is an advanced array technology, featured by a wide range of integration options and low power consumption. Its application fields include mobile phones, cameras, remote control, automotive, industrial control, and ultra-low power embedded systems. It provides excellent performance, cost efficiency and flexibility to system designers.

As a type of field effect transistors (FETs), the MKE38P600TLB switch has unique working principles. FETs are composed of three major components, the source, drain and channel. The source and drain are two terminals on each of the two sides. The channel is in-between. Each terminal has a discrete depletion layer with a controllable ionized dopant. The channel generates an electric field that can be adjusted by the voltage applied between the source and the drain. When the voltage between the source and the drain is high enough, electrons from the channel will flow from the source to the drain, and therefore, turning on the switch.

The MKE38P600TLB is a n-channel dual depletion MOSFET array that provides a wide range of integrated features. It has eight output terminals and eight input terminals. The eight output terminals are arranged on each side of the device. The input terminals are a combination of ground and voltage options, providing flexibility for the system design. It also features integrated ESD protection, and is able to withstand ESD stresses up to ±7V. In addition, it also includes thermal overload and overcurrent protection.

The MKE38P600TLB provides high performance, improved reliability and low power consumption. It is also compatible with most other MOSFETs in the market, making it an ideal choice for system designs. Its small size and low power consumption also make it a perfect fit for applications with size and power constraints.

The MKE38P600TLB’s main applications are in mobile phones, cameras and remote controls. Its small size and low power consumption make it suitable for use in any of these applications, where small size and energy efficiency are of the utmost importance. It is also suitable for use in automotive, industrial control, and ultra-low power embedded systems.

The MKE38P600TLB is a versatile device and provides many advantages to system designers. Its wide range of integration options and low power consumption make it suitable for a variety of applications. Its small size and reliable services also make it a perfect fit for applications with size and power constraints. With its unique working principles and excellent performance, the MKE38P600TLB is a great choice for system designs.

The specific data is subject to PDF, and the above content is for reference

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