MMIX2F60N50P3

Series:	HiPerFET™, Polar3™
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Rds On (Max) @ Id, Vgs:	110 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:	96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	6250pF @ 25V
Power - Max:	320W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	24-SMD Module, 9 Leads
Supplier Device Package:	24-SMPD

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Introduction
The MMIX2F60N50P3 is a semiconductor device belonging to the family of field-effect transistors (FETs), specifically metal-oxide-semiconductor field-effect transistors (MOSFETs). The device utilizes arrays of n-channel depletion mode transistors that are arranged in symmetric dual-gate packages. This type of MOSFET offers low capacitance and low resistance tantalum nitride (TaN) gate insulation. In addition, the device features an electro-static discharge (ESD) protection circuit. Due to these features, the MMIX2F60N50P3 is an ideal device for a variety of applications which include power management, analog and digital signal processing, as well as memory control and switching regulation.

Application Field
The most common application field for the MMIX2F60N50P3 is power management, mainly due to the device\'s low capacitance and low resistance gate insulation. The device enables efficient energy transfer, allowing for easy implementation in various power management systems. Power management applications often require robust devices, and with its electro-static discharge (ESD) protection, the MMIX2F60N50P3 is well-suited for this. In addition, the device is widely used for audio and video systems, allowing for efficient signal processing between different systems. It can also be used as a memory control as well as a data transfer device. The MMIX2F60N50P3 is also increasingly used in many consumer electronics products, from drones and drones-related accessories to wearable devices. Its low power consumption and wide resistance range enables the device to be used in a variety of consumer applications, from in-ear headphones to fitness trackers and beyond. Working Principle
The MMIX2F60N50P3 consists of an array of n-channel depletion mode MOSFETs formed on a die. A MOSFET device is typically composed of a lightly doped gate region and two induced channel regions. When a small electric field is applied to the gate region, it induces a corresponding electric field in the channel region. This induces a current to flow through the device, depending on the amount of voltage applied to the gate. The MMIX2F60N50P3 utilizes a dual gate arrangement, allowing for symmetric transfer of current. The two gates are both insulated by a tantalum nitride (TaN) gate insulating layer, which allows for low capacitance and low on-state resistance. Furthermore, the device features an electro-static discharge (ESD) protection circuit, which protects the device from high voltage spikes that can occur during operation. Conclusion
In conclusion, the MMIX2F60N50P3 is an ideal device for power management, analog and digital signal processing, memory control, and switching regulation. It utilizes an array of n-channel depletion mode MOSFETs in symmetric dual-gate packages with tantalum nitride (TaN) gate insulation. This provides low capacitance and low on-state resistance. In addition, the device also features an electro-static discharge (ESD) protection circuit which adds to its robustness. Its wide range of features allow for the device to be used in a variety of applications, from consumer electronics to power management systems.

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