APTMC120AM08CD3AG Allicdata Electronics
Allicdata Part #:

APTMC120AM08CD3AG-ND

Manufacturer Part#:

APTMC120AM08CD3AG

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1200V 250A D3
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2k...
DataSheet: APTMC120AM08CD3AG datasheetAPTMC120AM08CD3AG Datasheet/PDF
Quantity: 19
1 +: $ 0.63000
Stock 19Can Ship Immediately
$ 0.69
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
Power - Max: 1100W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3
Description

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APTMC120AM08CD3AG arrays, also known as array substrate, comprise a collection of transistors and other components interconnected on a single chip. This allows for the incorporation of complex functions into a single package.

The APTMC120AM08CD3AG array is a type of Field Effect Transistor (FET) technology. FETs are semiconductor devices used to amplify and switch eletrical signals. FETs are often used in radio frequency circuits, linear and switching power supplies, and analog circuits including possible digital and analog filters.

In this array, the FETs are arranged in an array of eight identical columns, which are connected in parallel according to the configuration of the power supply. Each column is made up of multiple cells which can be used to control the flow of current. The cells also contain other components such as diodes, resistors and capacitors.

The APTMC120AM08CD3AG array is suitable for use in applications such as power supplies for mobile phones and other portable devices, voltage converters, and analog-to-digital conversion. It is also used in a variety of RF and microwave applications. It has low on-resistance and allows for high-frequency operation.

The working principle of this array is based on the use of FETs to control the flow of electrical signals. FETs are three terminal devices that are used as switches and amplifiers. The three terminals are the source, gate and drain. The gate controls the flow of current between the source and the drain. This is achieved by applying a voltage to the gate terminal, which causes a charge to accumulate on the gate-drain junction. This in turn affects the current flowing through the channel.

The APTMC120AM08CD3AG array allows for the production of high-frequency signals in mobile devices. It also provides a low threshold voltage and allows for a wide range of amplitude and frequency variations. The array can be used for switching applications, driving power supplies and for power conversion. It is also used in signal conditioning and for detection in microwave circuits.

In summary, the APTMC120AM08CD3AG array is a type of Field Effect Transistor (FET) array technology which is used in modern mobile and portable device applications, such as power supplies, signal conditioning and detection. Its working principle depends on the use of FETs to control the flow of electrical signals by applying a voltage to the gate terminal, which causes the charge to accumulate on the gate-drain junction, thereby affecting the flow of current. This allows for the production of high-frequency signals in mobile devices and other applications.

The specific data is subject to PDF, and the above content is for reference

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