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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
MT29F1HT08ELCBBG1-37:B TR MT29F1HT08ELCBB
G1-37:BTR-ND		 MT29F1HT08ELCBB
G1-37:B TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 1.5Tb (192G x 8)
 Clock Frequency: 267MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29F1HT08ELCBBG1-37:BTR-ND Datasheet
EDFA164A2PF-GD-F-R TR EDFA164A2PF-GD-
F-RTR-ND		 EDFA164A2PF-GD-
F-R TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: SDRAM - Mobile LPDDR3
 Memory Size: 16Gb (256M x 64)
 Clock Frequency: 800MHz
 Memory Interface: Parallel
 Voltage - Supply: 1.14 V ~ 1.95 V
 Operating Temperature: -30C ~ 85C (TC)
1000
Order

1+:

$0

 EDFA164A2PF-GD-F-RTR-ND Datasheet
MT29F128G08CBCCBH6-6ITR:C MT29F128G08CBCC
BH6-6ITR:C-ND		 MT29F128G08CBCC
BH6-6ITR:C		 Micron Technology Inc.
View more  Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 128Gb (16G x 8)
 Clock Frequency: 166MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
1000
Order

1+:

$0

 MT29F128G08CBCCBH6-6ITR:C-ND Datasheet
S29GL01GP11TFIR10D S29GL01GP11TFIR
10D-ND		 S29GL01GP11TFIR
10D		 Cypress Semiconductor Corp
View more  Series: GL-P
 Packaging: Tray
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NOR
 Memory Size: 1Gb (128M x 8)
 Write Cycle Time - Word, Page: 110ns
 Access Time: 110ns
 Memory Interface: Parallel
 Voltage - Supply: 3 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 56-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 56-TSOP
1000
Order

1+:

$0

 S29GL01GP11TFIR10D-ND Datasheet
R1LV0108ESF-5SI#S1 R1LV0108ESF-5SI
#S1-ND		 R1LV0108ESF-5SI
#S1		 Renesas Electronics America
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM
 Memory Size: 1Mb (128K x 8)
 Write Cycle Time - Word, Page: 55ns
 Access Time: 55ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 32-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 32-TSOP (8x20)
1000
Order

1000+:

$1.7468

 R1LV0108ESF-5SI#S1-ND Datasheet
MT29F64G08CBCGBSX-37BES:G MT29F64G08CBCGB
SX-37BES:G-ND		 MT29F64G08CBCGB
SX-37BES:G		 Micron Technology Inc.
View more  Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 64Gb (8G x 8)
 Clock Frequency: 167MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29F64G08CBCGBSX-37BES:G-ND Datasheet
MT29F64G08ABEBBH6-12:B MT29F64G08ABEBB
H6-12:B-ND		 MT29F64G08ABEBB
H6-12:B		 Micron Technology Inc.
View more  Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 64Gb (8G x 8)
 Clock Frequency: 83MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29F64G08ABEBBH6-12:B-ND Datasheet
MT40A1G8SA-062E:E TR MT40A1G8SA-062E
:ETR-ND		 MT40A1G8SA-062E
:E TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: SDRAM - DDR4
 Memory Size: 8Gb (1G x 8)
 Clock Frequency: 1.6GHz
 Memory Interface: Parallel
 Voltage - Supply: 1.14 V ~ 1.26 V
 Operating Temperature: 0C ~ 95C (TC)
1000
Order

1+:

$0

 MT40A1G8SA-062E:ETR-ND Datasheet
EDF8164A3MC-GD-F-R EDF8164A3MC-GD-
F-R-ND		 EDF8164A3MC-GD-
F-R		 Micron Technology Inc.
View more  Part Status: Active
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: SDRAM - Mobile LPDDR3
 Memory Size: 8Gb (128M x 64)
 Clock Frequency: 800MHz
 Memory Interface: Parallel
 Voltage - Supply: 1.14 V ~ 1.95 V
 Operating Temperature: -30C ~ 85C (TC)
1000
Order

1+:

$0

 EDF8164A3MC-GD-F-R-ND Datasheet
AT28C256F-15SU-T AT28C256F-15SU-
TTR-ND		 AT28C256F-15SU-
T		 Microchip Technology
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: EEPROM
 Technology: EEPROM
 Memory Size: 256Kb (32K x 8)
 Write Cycle Time - Word, Page: 3ms
 Access Time: 150ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -40C ~ 85C (TC)
 Mounting Type: Surface Mount
 Package / Case: 28-SOIC (0.295", 7.50mm Width)
 Supplier Device Package: 28-SOIC
1000
Order

1000+:

$3.9972

 AT28C256F-15SU-TTR-ND Datasheet
S34ML04G104BHI010 428-4261-ND S34ML04G104BHI0
10		 Cypress Semiconductor Corp
View more  Series: ML-1
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 4Gb (256M x 16)
 Write Cycle Time - Word, Page: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-BGA (11x9)
75
Order

1+:

$9.1728

 428-4261-ND Datasheet
SST39VF400A-70-4C-B3KE SST39VF400A-70-
4C-B3KE-ND		 SST39VF400A-70-
4C-B3KE		 Microchip Technology
View more  Series: SST39 MPF
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH
 Memory Size: 4Mb (256K x 16)
 Write Cycle Time - Word, Page: 20s
 Access Time: 70ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFBGA
 Supplier Device Package: 48-TFBGA (6x8)
 Base Part Number: SST39VF400A
2
Order

1+:

$0.8505

 SST39VF400A-70-4C-B3KE-ND Datasheet
IS61C1024AL-12KLI-TR IS61C1024AL-12K
LI-TR-ND		 IS61C1024AL-12K
LI-TR		 ISSI, Integrated Silicon Solution Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 1Mb (128K x 8)
 Write Cycle Time - Word, Page: 12ns
 Access Time: 12ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 32-BSOJ (0.400", 10.16mm Width)
 Supplier Device Package: 32-SOJ
1000
Order

--

 IS61C1024AL-12KLI-TR-ND Datasheet
AS6C62256-55STIN 1450-1181-5-ND AS6C62256-55STI
N		 Alliance Memory, Inc.
View more  Packaging: Tray
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 256Kb (32K x 8)
 Write Cycle Time - Word, Page: 55ns
 Access Time: 55ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 5.5 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 28-TSSOP (0.465", 11.80mm Width)
 Supplier Device Package: 28-sTSOP
1000
Order

234+:

$1.0589

468+:

$1.0558

702+:

$1.0401

1170+:

$0.9954

5148+:

$0.9269

 1450-1181-5-ND Datasheet
AS7C31025B-12TJINTR AS7C31025B-12TJ
INTR-ND		 AS7C31025B-12TJ
INTR		 Alliance Memory, Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 1Mb (128K x 8)
 Write Cycle Time - Word, Page: 12ns
 Access Time: 12ns
 Memory Interface: Parallel
 Voltage - Supply: 3 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 32-BSOJ (0.300", 7.62mm Width)
 Supplier Device Package: 32-SOJ
1000
Order

1000+:

$1.4311

 AS7C31025B-12TJINTR-ND Datasheet
W632GG6MB-15 TR W632GG6MB-15TR-
ND		 W632GG6MB-15 TR Winbond Electronics
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: SDRAM - DDR3
 Memory Size: 2Gb (128M x 16)
 Clock Frequency: 667MHz
 Access Time: 20ns
 Memory Interface: Parallel
 Voltage - Supply: 1.425 V ~ 1.575 V
 Operating Temperature: 0C ~ 95C (TC)
1000
Order

3000+:

$2.998

 W632GG6MB-15TR-ND Datasheet
IS61WV51216EDBLL-10TLI-TR IS61WV51216EDBL
L-10TLI-TR-ND		 IS61WV51216EDBL
L-10TLI-TR		 ISSI, Integrated Silicon Solution Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 8Mb (512K x 16)
 Write Cycle Time - Word, Page: 10ns
 Access Time: 10ns
 Memory Interface: Parallel
 Voltage - Supply: 2.4 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 44-TSOP (0.400", 10.16mm Width)
 Supplier Device Package: 44-TSOP2
1000
Order

--

 IS61WV51216EDBLL-10TLI-TR-ND Datasheet
AT27C010-15PI AT27C010-15PI-N
D		 AT27C010-15PI Microchip Technology
View more  Packaging: Tube
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: EPROM
 Technology: EPROM - OTP
 Memory Size: 1Mb (128K x 8)
 Access Time: 150ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -40C ~ 85C (TC)
 Mounting Type: Through Hole
 Package / Case: 32-DIP (0.600", 15.24mm)
 Supplier Device Package: 32-DIP
 Base Part Number: AT27C010
1000
Order

--

 AT27C010-15PI-ND Datasheet
AT29C010A-12PC AT29C010A-12PC-
ND		 AT29C010A-12PC Microchip Technology
View more  Packaging: Tube
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH
 Memory Size: 1Mb (128K x 8)
 Write Cycle Time - Word, Page: 10ms
 Access Time: 120ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: 0C ~ 70C (TC)
 Mounting Type: Through Hole
 Package / Case: 32-DIP (0.600", 15.24mm)
 Supplier Device Package: 32-DIP
 Base Part Number: AT29C010
1000
Order

--

 AT29C010A-12PC-ND Datasheet
AT28C256-25UM/883 AT28C256-25UM/8
83-ND		 AT28C256-25UM/8
83		 Microchip Technology
View more  Packaging: Tray
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: EEPROM
 Technology: EEPROM
 Memory Size: 256Kb (32K x 8)
 Write Cycle Time - Word, Page: 10ms
 Access Time: 250ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -55C ~ 125C (TC)
 Mounting Type: Through Hole
 Package / Case: 28-BCPGA
 Supplier Device Package: 28-CPGA (13.97x16.51)
 Base Part Number: AT28C256
1000
Order

--

 AT28C256-25UM/883-ND Datasheet
AT28HC256-90JA AT28HC256-90JA-
ND		 AT28HC256-90JA Microchip Technology
View more  Packaging: Tube
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: EEPROM
 Technology: EEPROM
 Memory Size: 256Kb (32K x 8)
 Write Cycle Time - Word, Page: 10ms
 Access Time: 90ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -40C ~ 125C (TC)
 Mounting Type: Surface Mount
 Package / Case: 32-LCC (J-Lead)
 Supplier Device Package: 32-PLCC
 Base Part Number: AT28HC256
1000
Order

1+:

$0

 AT28HC256-90JA-ND Datasheet
CAT28C16ALI90 CAT28C16ALI90-N
D		 CAT28C16ALI90 ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: EEPROM
 Technology: EEPROM
 Memory Size: 16Kb (2K x 8)
 Write Cycle Time - Word, Page: 5ms
 Access Time: 90ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Through Hole
 Package / Case: 24-DIP (0.600", 15.24mm)
 Supplier Device Package: 24-PDIP
 Base Part Number: CAT28C16A
1000
Order

1+:

$0

 CAT28C16ALI90-ND Datasheet
CAT28F001L-12T CAT28F001L-12T-
ND		 CAT28F001L-12T ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH
 Memory Size: 1Mb (128K x 8)
 Write Cycle Time - Word, Page: 120ns
 Access Time: 120ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Through Hole
 Package / Case: 32-DIP (0.600", 15.24mm)
 Supplier Device Package: 32-PDIP
 Base Part Number: CAT28F001
1000
Order

1+:

$0

 CAT28F001L-12T-ND Datasheet
SST39WF400A-90-4I-B3KE SST39WF400A-90-
4I-B3KE-ND		 SST39WF400A-90-
4I-B3KE		 Microchip Technology
View more  Series: SST39 MPF
 Packaging: Tray
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH
 Memory Size: 4Mb (256K x 16)
 Write Cycle Time - Word, Page: 40s
 Access Time: 90ns
 Memory Interface: Parallel
 Voltage - Supply: 1.65 V ~ 1.95 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 48-TFBGA
 Supplier Device Package: 48-TFBGA
 Base Part Number: SST39WF400A
1000
Order

--

 SST39WF400A-90-4I-B3KE-ND Datasheet
MT29F2G08ABBEAHC:E TR 557-1543-2-ND MT29F2G08ABBEAH
C:E TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 2Gb (256M x 8)
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-VFBGA (10.5x13)
 Base Part Number: MT29F1G08
1000
Order

1+:

$0

 557-1543-2-ND Datasheet
MT29F4G16ABBEAH4:E TR MT29F4G16ABBEAH
4:ETR-ND		 MT29F4G16ABBEAH
4:E TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 4Gb (256M x 16)
 Memory Interface: Parallel
 Voltage - Supply: 1.7 V ~ 1.95 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-VFBGA (9x11)
 Base Part Number: MT29F4G16
1000
Order

1+:

$0

 MT29F4G16ABBEAH4:ETR-ND Datasheet
S29GL256S10WEI029 S29GL256S10WEI0
29-ND		 S29GL256S10WEI0
29		 Cypress Semiconductor Corp
View more  Series: GL-S
 Packaging: Bulk
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NOR
 Memory Size: 256Mb (16M x 16)
 Write Cycle Time - Word, Page: 60ns
 Access Time: 100ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: Die
 Supplier Device Package: Wafer
1000
Order

1+:

$0

 S29GL256S10WEI029-ND Datasheet
CY7C1049BNL-17VCT CY7C1049BNL-17V
CT-ND		 CY7C1049BNL-17V
CT		 Cypress Semiconductor Corp
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 4Mb (512K x 8)
 Write Cycle Time - Word, Page: 17ns
 Access Time: 17ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 36-BSOJ (0.400", 10.16mm Width)
 Supplier Device Package: 36-SOJ
1000
Order

1+:

$0

 CY7C1049BNL-17VCT-ND Datasheet
RMLV1616AGSD-5S2#AC0 RMLV1616AGSD-5S
2#AC0-ND		 RMLV1616AGSD-5S
2#AC0		 Renesas Electronics America
View more  Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM
 Memory Size: 16Mb (2M x 8, 1M x 16)
 Write Cycle Time - Word, Page: 55ns
 Access Time: 55ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
1000
Order

1+:

$7.1883

10+:

$6.656

25+:

$6.5051

50+:

$6.4695

100+:

$5.6955

250+:

$5.4137

500+:

$5.3582

1000+:

$5.1795

 RMLV1616AGSD-5S2#AC0-ND Datasheet
MT29E3T08EQHBBG2-3ES:B MT29E3T08EQHBBG
2-3ES:B-ND		 MT29E3T08EQHBBG
2-3ES:B		 Micron Technology Inc.
View more  Part Status: Obsolete
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 3Tb (384G x 8)
 Clock Frequency: 333MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.5 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29E3T08EQHBBG2-3ES:B-ND Datasheet
MT29F512G08AUCBBH8-6IT:B TR MT29F512G08AUCB
BH8-6IT:BTR-ND		 MT29F512G08AUCB
BH8-6IT:B TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 512Gb (64G x 8)
 Clock Frequency: 166MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
1000
Order

1+:

$0

 MT29F512G08AUCBBH8-6IT:BTR-ND Datasheet
MT29F6T08ETHBBM5-3R:B TR MT29F6T08ETHBBM
5-3R:BTR-ND		 MT29F6T08ETHBBM
5-3R:B TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 6Tb (768G x 8)
 Clock Frequency: 333MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.5 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29F6T08ETHBBM5-3R:BTR-ND Datasheet
MT44K32M18RB-107E IT:B TR MT44K32M18RB-10
7EIT:BTR-ND		 MT44K32M18RB-10
7E IT:B TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: DRAM
 Memory Size: 576Mb (32M x 18)
 Clock Frequency: 933MHz
 Access Time: 8ns
 Memory Interface: Parallel
 Voltage - Supply: 1.28 V ~ 1.42 V
 Operating Temperature: -40C ~ 95C (TC)
 Mounting Type: Surface Mount
 Package / Case: 168-TBGA
 Supplier Device Package: 168-BGA
1000
Order

1+:

$0

 MT44K32M18RB-107EIT:BTR-ND Datasheet
EDFA232A2PD-GD-F-R TR EDFA232A2PD-GD-
F-RTR-ND		 EDFA232A2PD-GD-
F-R TR		 Micron Technology Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Memory Type: Volatile
 Memory Format: DRAM
 Technology: SDRAM - Mobile LPDDR3
 Memory Size: 16Gb (512M x 32)
 Clock Frequency: 800MHz
 Memory Interface: Parallel
 Voltage - Supply: 1.14 V ~ 1.95 V
 Operating Temperature: -30C ~ 85C (TC)
1000
Order

1+:

$0

 EDFA232A2PD-GD-F-RTR-ND Datasheet
MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM
5-3:B-ND		 MT29E6T08ETHBBM
5-3:B		 Micron Technology Inc.
View more  Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 6Tb (768G x 8)
 Clock Frequency: 333MHz
 Memory Interface: Parallel
 Voltage - Supply: 2.5 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
1000
Order

1+:

$0

 MT29E6T08ETHBBM5-3:B-ND Datasheet
S34ML02G200BHB000 428-4253-ND S34ML02G200BHB0
00		 Cypress Semiconductor Corp
View more  Series: Automotive, AEC-Q100, ML-2
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 2Gb (256M x 8)
 Write Cycle Time - Word, Page: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 105C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-BGA (11x9)
535
Order

--

 428-4253-ND Datasheet
S29GL128S10TFI010 1274-1028-ND S29GL128S10TFI0
10		 Cypress Semiconductor Corp
View more  Series: GL-S
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NOR
 Memory Size: 128Mb (8M x 16)
 Write Cycle Time - Word, Page: 60ns
 Access Time: 100ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 56-TFSOP (0.724", 18.40mm Width)
 Supplier Device Package: 56-TSOP
1000
Order

--

 1274-1028-ND Datasheet
S34ML08G101BHI000 1274-1063-ND S34ML08G101BHI0
00		 Cypress Semiconductor Corp
View more  Series: ML-1
 Packaging: Tray
 Part Status: Active
 Memory Type: Non-Volatile
 Memory Format: FLASH
 Technology: FLASH - NAND
 Memory Size: 8Gb (1G x 8)
 Write Cycle Time - Word, Page: 25ns
 Memory Interface: Parallel
 Voltage - Supply: 2.7 V ~ 3.6 V
 Operating Temperature: -40C ~ 85C (TA)
 Mounting Type: Surface Mount
 Package / Case: 63-VFBGA
 Supplier Device Package: 63-BGA (11x9)
1000
Order

--

 1274-1063-ND Datasheet
IS61LV6416-8KL-TR IS61LV6416-8KL-
TR-ND		 IS61LV6416-8KL-
TR		 ISSI, Integrated Silicon Solution Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 1Mb (64K x 16)
 Write Cycle Time - Word, Page: 8ns
 Access Time: 8ns
 Memory Interface: Parallel
 Voltage - Supply: 3.135 V ~ 3.6 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Surface Mount
 Package / Case: 44-BSOJ (0.400", 10.16mm Width)
 Supplier Device Package: 44-SOJ
1000
Order

2500+:

$1.116

 IS61LV6416-8KL-TR-ND Datasheet
7164S20TPG 7164S20TPG-ND 7164S20TPG IDT, Integrated Device Technology Inc
View more  Packaging: Tube
 Part Status: Active
 Memory Type: Volatile
 Memory Format: SRAM
 Technology: SRAM - Asynchronous
 Memory Size: 64Kb (8K x 8)
 Write Cycle Time - Word, Page: 20ns
 Access Time: 20ns
 Memory Interface: Parallel
 Voltage - Supply: 4.5 V ~ 5.5 V
 Operating Temperature: 0C ~ 70C (TA)
 Mounting Type: Through Hole
 Package / Case: 28-DIP (0.300", 7.62mm)
 Supplier Device Package: 28-PDIP
 Base Part Number: IDT7164
1000
Order

280+:

$1.3828

 7164S20TPG-ND Datasheet
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