Allicdata Part #: | S29GL256S10WEI029-ND |
Manufacturer Part#: |
S29GL256S10WEI029 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL WAFER |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
DataSheet: | S29GL256S10WEI029 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-S |
Packaging: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Wafer |
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The S29GL256S10WEI029 is a memory device that is a high-performance, low-power Flash memory device manufactured by Micron Technology. This device offers one of the industry’s best performance of 28.2 megabytes per second (MB/s) and density levels of 256Mb. Due to its high speed and low power consumption, S29GL256S10WEI029 is ideal for a variety of applications that require large capacity memory or fast data throughput.
S29GL256S10WEI029 Application Fields
S29GL256S10WEI029 is suitable for a variety of applications, such as industrial automation, automotive systems, medical devices, telecommunication and networking equipment, consumer electronics, video surveillance systems, and military and aerospace applications. Its features, such as its fast data rates, wide voltage range, wide temperature range and low power consumption, make it ideal for these types of applications.
S29GL256S10WEI029 Working Principle
S29GL256S10WEI029 is a FLASH memory device that utilizes a NOR gate architecture. It operates by storing and retrieving data from the device’s integrated memory cells. The information is written to and read from the memory cells when the chip is powered, and the data is stored even after power is removed. This enables the permanent storage of important data and programs in the device.
The S29GL256S10WEI029 device is organized into four banks of 32 bits each, which allows four simultaneous accesses to the device. The device can be accessed randomly and supports multiple I/O configurations and sector erase requirements.
The device supports two types of programming operations – page programming and block erase operations. In page programming, a page of memory is programmed in a single operation. In block erase operations, an entire block of memory can be erased in a single operation. The device also supports a flexible erase algorithm that can erase several times per second.
The S29GL256S10WEI029 device uses an advanced antifuse technology to provide a high degree of security and protection. This enables the device to be safely and reliably protected from data corruption due to external noise or interference. The anti-fuse technology also allows the device to be programmed multiple times without the need for device reconfiguration.
In summary, the S29GL256S10WEI029 is a high-performance Flash memory device suitable for a wide range of applications. It features fast data throughput, a wide voltage range, wide temperature range and low power consumption. It is also highly secure due to its advanced antifuse protection and is capable of withstanding many erasing and programming cycles.
The specific data is subject to PDF, and the above content is for reference
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