MT29F2G08ABBEAHC:E TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (256M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (10.5x13)
Base Part Number:	MT29F1G08

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Introduction MT29F2G08ABBEAHC:E TR is a type of memory that is used for a wide range of applications. It is a type of NAND Flash Memory and is a popular choice for many consumer electronics, industrial applications, and computer systems. In this article, we will discuss the application field and working principle of MT29F2G08ABBEAHC:E TR.Application Field MT29F2G08ABBEAHC:E TR memory is used in both consumer and industrial applications. On the consumer side, it can be found in digital cameras, music players, and gaming systems. It is also used in industrial applications such as automotive, medical, and test and measurement equipment. MT29F2G08ABBEAHC:E TR memory is also used in embedded systems and robotics applications.Working Principle MT29F2G08ABBEAHC:E TR memory works by using a special type of structure called the NAND Flash memory. This structure is made up of transistors and polysilicon layers. The transistors act as a gate for the storage of binary values and the polysilicon layers form the actual data storage. To make the data storage more efficient, MT29F2G08ABBEAHC:E TR memory stores the data in blocks of eight bytes, which is the standard size for a NAND Flash memory chip. This memory also uses a 16-bit data access protocol.Along with the data storage structure, MT29F2G08ABBEAHC:E TR memory also uses error-correcting code (ECC) to ensure that data is not corrupted during writing and reading operations. The ECC algorithm reproduces the data in case of an error, thereby allowing the memory to self-correct after a disturbance.The memory is also protected by a B-CAS erase/write cycle system, which provides a kind of self-protection against power outages or other situations that could damage the memory. The last layer of protection is the flash erasing feature, which allows a user to erase the memory quickly and easily.Conclusion MT29F2G08ABBEAHC:E TR is a type of NAND Flash memory that is used in both consumer and industrial applications. It has a data storage structure that allows it to store data in blocks of eight bytes and uses an ECC algorithm to ensure data accuracy. Additionally, the memory is protected by a B-CAS erase/write cycle system and a flash erasing feature. These features allow the memory to survive power outages, as well as making it easier to erase and write data.

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