S29GL01GP11TFIR10D

Series:	GL-P
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	110ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	56-TSOP

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Application Field of S29GL01GP11TFIR10D

The S29GL01GP11TFIR10D is an advanced memory used in a variety of industrial and consumer applications. It is ideal for applications that require reliable storage of data, such as medical devices and automotive systems. It is also ideal for applications that require high speeds, such as high-performance computing (HPC) and distributed systems.The S29GL01GP11TFIR10D is a low-power memory solution with a power management controller. It is well suited for applications that need to reduce energy consumption, as well as for battery-powered applications. It features a low-voltage interface, making it suitable for mobile and portable applications.The S29GL01GP11TFIR10D provides a wide range of features, including high read and write speeds, error detection and correction, security features, and flexible programming modes. It also supports advanced features such as address bits scrambling, clock calibration, and single-bit CRC.This memory is available in multiple densities, ranging from 1 to 64 gigabits, making it suitable for a variety of applications. It also supports quad-die configurations and dual-die pins, enabling increased capacity and high performance while preserving the same footprint. It is also backward compatible with SLC, enabling easy upgrades.

Working Principle

The S29GL01GP11TFIR10D is a type of non-volatile memory, which means that the data stored in the memory is not erased when the power is turned off. Instead, it remains stored even without power. This type of memory is also known as flash memory.The core principle behind the S29GL01GP11TFIR10D is to provide reliable, robust, and high-speed data storage. It features a range of features that enable high speed as well as efficient power consumption. One of the key features is the error detection and correction (EDAC), which enhances the memory’s reliability by detecting and correcting errors during data transfer.The S29GL01GP11TFIR10D also features a low-voltage interface, which enables the device to operate within a voltage range of 1.2V to 3.3V and consume as little as 9.5 mA of current. This feature makes it suitable for battery-powered applications. The memory also supports a wide operating temperature range, making it suitable for both commercial and industrial applications.The S29GL01GP11TFIR10D also supports a range of external protocols and operations, such as the MultiMediaCard (MMC) and the NOR Flash interface. These protocols enable the device to interact with other external devices, such as a host processor. The device also supports a number of different programming and erase modes, including page and block erase, as well as sector and chip erase.The S29GL01GP11TFIR10D also supports advanced features, such as address bits scrambling, clock calibration, single-bit CRC, and caching. These features ensure that the memory is fast, reliable, and efficient.The S29GL01GP11TFIR10D is an ideal storage solution for a variety of industrial and consumer applications. It is reliable, robust, and high-speed, making it perfect for applications that need to store large amounts of data with fast access times. It is also low-power and supports a wide operating temperature range, making it suitable for mobile applications. Its range of features makes the device suitable for a variety of applications, from HPC to distributed systems and medical devices.

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