IS42S16800F-6TLI

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Memory is an important component of modern electronic systems, and one type of commonly used memory is called static random access memory or SRAM. The IS42S16800F-6TLI is an example of a high capacity and high-speed SRAM from the ISSI family of products. This device provides a fast and reliable memory solution for a variety of different applications.

The IS42S16800F-6TLI is a 16Mbit SRAM with a data access time of 6ns. It offers a low-voltage operation (VCC = 1.8V), is based on a 3.3V technology, and has a 256K×64-bit architecture. It also has an operating temperature range of 0°C to +85°C. The device is also RoHS compliant and is offered in a common 48-bump micro BGA package.

For its application field, the IS42S16800F-6TLI is used most often in communications, automotive and industrial applications. These applications may require the storage and access of large amounts of information, and the IS42S16800F-6TLI offers the performance and reliability needed to meet these requirements. For example, the device can be used in base stations, Ethernet switches, and routers to provide high-speed storage for a variety of applications.

The IS42S16800F-6TLI’s working principle is quite simple and is based on the concept of a dual gate memory cell. Each memory cell consists of two pairs of transistors—one pair is used to store a bit of data and the other pair is used to detect and set that bit. When a voltage is applied to the appropriate inputs, the stored bit of data is either set or reset. The state of each memory cell is controlled by an enable line that is used to prevent the inadvertent reading or writing of data.

The device also has an elaborate built-in redundancy system which allows data to be recovered in the event of a single locational error. This system works by comparing a signal from the address bits to information stored in a redundant memory array. If there is a mismatch, the signal can be redirected to another, valid memory cell.

The IS42S16800F-6TLI is an advanced SRAM that is capable of providing high-performance, reliable storage for a variety of applications. It offers a low-voltage operation and a wide operating temperature range to provide the needed longevity and reliability for many applications. The device’s dual-gate memory cells and built-in redundancy make it a robust and dependable memory solution.

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