IS42S16400J-6TL

IS42S16400J is a 128Mb, 4-bank synchronous DRAM.As part of the ISSI SDRAM family, IS42S16400J provides high speed and high density while achieving lower power consumption. With a cycle time of 6ns, this memory offers a true data rate of 100MHz.

In IS42S16400J Memory application fields, IS42S16400J is widely used in a variety of applications including graphics, video, or telecommunications. This RAM can also be utilized in storage, switching and base station applications. For example, used in iPad or smart phone, it can accelerate the loading speed of the software. In addition, the IS42S16400J can be found in servers, modems and mobile computing devices.These devices require a combination of high bandwidth, low power consumption and high density that IS42S16400J can provide.

IS42S16400J is a single-ended, LVTTL compatible memory designed for 6ns cycle time operation at 100MHz data rate. This device is organized as 4 Banks organized as 16,384 x 16; its depth of operation is 16 bits. Bank Selection is achieved by providing either a 32-bit Word Address or by providing a 9-Bit Row Address and an 8-Bit Column Address.

To study the working principle of IS42S16400J, one should begin with understanding the Command Address SDRAM Cycle. A command address SDRAM Cycle is composed of 4 basic operations : ACT, WL, RL and PRE. The ACT operation is an activate command which causes one row of an open bank to be accessed with row address as it is being presented. This operation will allow specific column addresses to be accessed in that bank. A WL operation is write operation which will allow data to be written to the specified address. The RL operation is a read operation which will allow data to be available on the memory bus for the specified address. Finally the PRE operation is a precharge command which returns the bank to a precharged state, disconnecting the row from the array and preparing it for another ACT command.

Once the user has instructed the SDRAM controller to perform these four operations, a given bank within the SDRAM on IS42S16400J may be activated and configured. The memory is first initialized by issuing a PRE command and followed by a single ACT command. This command will bring the specified row into the activated state. Next, a WL command is issued to the bank with the 8-bit column address specified. Then, a RL command is issued with the 8-bit column address specified. When HL or RL command is issued, the logical groups of 16-bits would enter the Sense Amplifiers resulting in the data being stored on the output pins of the SDRAM.

In conclusion, IS42S16400J with its 6ns cycle time is ideal for applications that require high speed and high density while achieving lower power consumption. The memory is typically applied in areas such as graphics, video, telecommunications, storage, switching, base stations and more. To fully understand its working stream, one have to look into the SDRAM Cycle, which is composed of four basic operations.