IS42S16100H-7TLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	16Mb (1M x 16)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	50-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	50-TSOP II

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Introduction

IS42S16100H-7TLI is a type of DRAM module from ISSI (Integrated Silicon Solution, Inc.). This dynamic random access memory (DRAM) module is used for applications where high capacity, performance and reliability are needed. IS42S16100H-7TLI offers a combination of features that makes it suitable for many applications. Its features include a fast data I/O rate of 10MHz, a low power standby mode and a high energy efficiency. In addition, this DRAM module offers a 16-bit wide data bus and an integrated error correction code (ECC) system.

Application Field

IS42S16100H-7TLI DRAM module is designed to offer high capacity, performance and reliability. It is suitable for use in a wide range of embedded systems and applications, such as cellular phones, smart phones, navigation systems, digital cameras, multimedia players and other consumer electronics products. For example, it can be used to improve the performance of high-speed, broadband data transmission networks, such as high-speed ADSL autofocus systems, by providing quick access to large amounts of data.IS42S16100H-7TLI is also used in data storage applications, such as RAID and SAN storage systems, as well as for applications requiring high data throughput, such as medical imaging systems. It is also an excellent choice for mission-critical applications, such as industrial automation, automotive applications and telecommunications, due to its reliability, durability and low power consumption.

Working Principle

The IS42S16100H-7TLI DRAM module operates on the principles of dynamic random access memory (DRAM). It uses an array of transistors and capacitors to store digital information. When the DRAM module is operated, the transistors switch on and off to manipulate the charge stored in the capacitors. This cyclical manipulation of the capacitors allows for the quick reading and writing of digital data.The IS42S16100H-7TLI DRAM module features a 16-bit wide data bus, allowing for the input and output of 16 bits of data simultaneously. The DRAM module is equipped with an integrated ECC function, which detects and corrects errors during read and write operations to improve the reliability of the data being transmitted.

Conclusion

In conclusion, the IS42S16100H-7TLI DRAM module is a high-performance memory device that offers excellent performance, reliability and durability. This DRAM module is suitable for use in a wide range of embedded systems and applications, such as cellular phones and digital cameras. Its features include a fast data I/O rate, low power consumption and an integrated ECC system, making it an excellent choice for mission-critical applications.

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