IS42S16100H-6TL

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	16Mb (1M x 16)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	50-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	50-TSOP II

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Introduction

IS42S16100H-6TL is a type of memory which is used in various industries and applications. It is a high-speed synchronous DRAM designed for high performance applications such as memory intensive embedded systems and PCs. The 6TL in its name stands for six-transistor logic, which indicates that it uses six transistors in the logic circuitry associated with each memory cell, enabling faster access and higher density than earlier technologies. The memory has a range of features, including a fast cycle time, low latency random access, pipelined burst access and easy interfacing with external buses and caches.

Parameters

The IS42S16100H-6TL memory comes with a range of different features and parameters. These include an 8-bit wide data bus, 512K x 16 deep configuration and an access time of 7ns. It also includes an asynchronous power down mode, SDRAM refresh support, an extended power up/power down refresh cycle period and auto bank precharge.

Application Fields

The IS42S16100H-6TL memory is suitable for use in a variety of industries and applications, such as automotive, medical, aerospace, industrial controls and telecommunications. It can also be used in gaming consoles, POS systems, digital video recorders, multimedia projectors and Set-top boxes. The memory is especially well-suited to embedded systems that require fast memory access times and which are memory-intensive.

Working Principle

The working principle of IS42S16100H-6TL memory is based on the technology of six-transistor logic. This involves the combination of several transistors in a circuitry associated with each memory cell which enables faster access and higher density than earlier technologies. The memory cells are connected together in a closely packed array, and when a particular cell is addressed by its column and row coordinates the associated transistors will close its circuit and it will be ready to store or read data. This allows for faster access to memory than in DRAMs with earlier technologies. The 6TL also enables pipelined burst access, which means that when a memory read or write command is issued, the following commands will be pre-fetched and ready for execution, resulting in faster memory performance. This can be useful in applications where data needs to be moved through a system quickly and efficiently.

Advantages

The main advantage of the IS42S16100H-6TL memory is its fast cycle time, high performance and low power consumption. This makes it suitable for use in embedded systems, such as those used in automotive and industrial applications, where size and cost constraints limit the availability of more powerful processors. Its pipelined burst access ensures faster access to memory than less advanced technologies, which is useful for memory-intensive and latency-sensitive applications. The 6TL technology also allows for higher density, making more efficient use of the available space for more memory.

Conclusion

The IS42S16100H-6TL memory is a type of high-speed synchronous DRAM designed for use in embedded systems, PCs, gaming consoles and other memory-intensive applications. Its six-transistor logic (6TL) technology allows for faster access and higher density than earlier technologies, making it especially well-suited to memory-intensive applications. Its low power consumption and fast cycle time makes it an attractive choice for embedded systems and other applications where cost and size are constraints. This memory is a reliable and efficient choice for a wide range of uses.

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