IS42S16800F-7TLI Allicdata Electronics
Allicdata Part #:

706-1270-ND

Manufacturer Part#:

IS42S16800F-7TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5....
DataSheet: IS42S16800F-7TLI datasheetIS42S16800F-7TLI Datasheet/PDF
Quantity: 1589
Stock 1589Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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The widespread use of technology and devices have made memory an essential part of modern life. Data storage devices and systems are relying on memory for quick retrieval, speeds and accuracy. Two types of memory are DRAM and SRAM, and the IS42S16800F-7TLI memory is part of the SRAM family.

SRAM (static random-access memory) is a type of fast, volatile memory that allows random access to stored data. SRAM is a common type of memory used in computer-controlled devices, ranging from laptops to gaming consoles to smart home devices. The IS42S16800F-7TLI memory is a asynchronous SRAM, which means it is a stand-alone read-write memory without any clock signals.

The IS42S16800F-7TLI memory is mainly used in applications that require high-speed performance, such as gaming consoles, digital cameras, PDAs, mobile phones, and other handheld devices. It is designed to be low power, with a lower operating current and a wide temperature range. The device is also a 16Mb device with a configuration of 32M x 16-bits.

The IS42S16800F-7TLI memory is a synchronous device, meaning that its operation is synchronized by an external clock signal. The clock signal is used to synchronize the data transfers as well as the data output. This means that the device can be used for a variety of operations such as reading, writing, and erasing of data.

The IS42S16800F-7TLI memory uses a two-stage write mechanism, which increases data retention and ensures reliable operations. This two-stage write process is the same mechanism used in the industry-standard SRAMs. It allows for faster data transfers, lower power consumption, and higher data integrity.

The IS42S16800F-7TLI memory also features a burst-mode feature, which can increase the speed of data access. The burst-mode feature utilizes the on-chip multiplexing of address and data buses. This allows data accesses to be grouped together and thus increasing the speed of access. The burst-mode is configurable, allowing it to handle burst lengths of up to 512 bits.

Although the IS42S16800F-7TLI memory is primarily used in mobile and handheld devices, it can also be used in other applications. These applications include personal computers, laptops, industrial control systems, automotive systems, and embedded systems. The IS42S16800F-7TLI memory is also an excellent choice for applications that require low power consumption, reliable operation, and high-speed performance.

In summary, the IS42S16800F-7TLI memory is an asynchronous SRAM designed to provide high-speed performance and low-power consumption. The device is put to use in a wide range of applications, and the burst-mode feature allows for faster data access. This device is a great choice for any application that requires reliable operation and high-speed performance.

The specific data is subject to PDF, and the above content is for reference

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