IS42S16100C1-7BLI Allicdata Electronics
Allicdata Part #:

IS42S16100C1-7BLI-ND

Manufacturer Part#:

IS42S16100C1-7BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 60TFBGA
More Detail: SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.5...
DataSheet: IS42S16100C1-7BLI datasheetIS42S16100C1-7BLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)
Description

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Memory

The IS42S16100C1-7BLI is a very popular and widely used static random access memory (SRAM) device. It is a non-volatile type of memory that is commonly used in digital systems, embedded systems and computer designs. This particular SRAM model has a capacity of 16 MB of data and is available in commercial operating voltages ranging from 2.7V to 3.3V.

IS42S16100C1-7BLI Application Field

The IS42S16100C1-7BLI SRAM is generally used for data storage and retrieval applications. It is an ideal memory device for those applications that require data to be stored and retrieved quickly, but with minimal power consumption. This is the perfect choice for embedded system designs, automotive electronics, industrial control systems, consumer electronics and network applications such as VPNs, routers and switches. It can also be used for buffer memory in applications such as RAIDs and high-performance computing.

IS42S16100C1-7BLI Working Principle

At the heart of the IS42S16100C1-7BLI SRAM is a simple working principle. When a read or write operation is performed, the SRAM\'s content is accessed via the addresses of one of the sixteen address lines. The data is then stored or retrieved from the internal memory array using these addresses. The SRAM is then written to and read from using the data lines, making it fast and efficient for data storage and retrieval.

The IS42S16100C1-7BLI SRAM\'s internal register includes an array of static memory cells arranged in a matrix. These memory cells provide data storage and retrieval capabilities, and each cell is composed of several transistors. Each row of this matrix is driven by a row line, and each column by a bit line. The combined current or voltage of these rows and columns is used to provide all the necessary signals for data transfer, as well as for controlling the status of the device.

The main advantage of the IS42S16100C1-7BLI SRAM is its fast data transfer rate and low power consumption. It offers features such as a pipelined read/write mode, which decreases the latency of read/write operations, and a process-voltage-temperature compensated mask, which increases the reliability of the device. Therefore, it is a great choice for those applications that require fast data transfer rates and low power consumption.

Conclusion

The IS42S16100C1-7BLI SRAM is a very popular and widely used interface device, due to its fast data transfer rate and low power consumption. This device is ideal for data storage and retrieval applications in embedded system designs, automotive electronics, industrial control systems, consumer electronics, and network applications. Its simple working principle ensures that data can be stored and retrieved quickly and efficiently, while consuming minimal power.

The specific data is subject to PDF, and the above content is for reference

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