Allicdata Part #: | 1242-1043-ND |
Manufacturer Part#: |
1N1190A |
Price: | $ 4.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 600V 40A DO5 |
More Detail: | Diode Standard 600V 40A Chassis, Stud Mount DO-5 |
DataSheet: | 1N1190A Datasheet/PDF |
Quantity: | 220 |
1 +: | $ 4.21470 |
10 +: | $ 3.76173 |
100 +: | $ 3.08454 |
500 +: | $ 2.49771 |
1000 +: | $ 2.10650 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 40A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N1190 |
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The 1N1190A is a single, fast recovery rectifier diode designed for general-purpose and high-speed switching applications. When used in conjunction with other diodes, it can provide a variety of circuit configurations including half-wave, full-wave, bridge and full-bridge rectifiers. This specialty diode is built with a combination of proprietary, electron-based and dielectric-based materials. The 1N1190A\'s electron-based materials make it capable of ultra-fast, low-temperature recovery times and high-frequency switching rates.
The core construction of the 1N1190A diode consists of an npn silicon diode and a layer of dielectric material between the anode and cathode electrodes. The electrical characteristics of the 1N1190A differ from more common silicon diodes, as a result of the dielectric material between the anodes and the active junction. The 1N1190A\'s electron-based materials allow for its ultra-fast recovery times and switching speeds.
In a full-wave rectifier circuit, the current flow through the 1N1190A will alternate directions, so that the positive pole of the direct current power supply is connected to the positive pole of the cathode while the negative pole of the direct current power supply is connected to the negative pole of the anode. With this method, the electrical charges transferred between these connections will be regulated by the diode, which will convert ac current into pure dc current.
The 1N1190A is also capable of handling higher voltages and faster switching of current than a standard rectifier diode design. This fast switching capability allows the 1N1190A to be used in applications that require a more dynamic response from the diode including power supplies, inrush current limiters, lighting control and AC motors. Unlike more traditional diodes, the 1N1190A does not require a reverse bias protection circuit, as its reverse breakover voltage does not produce sufficient current to cause damage to the diode.
The 1N1190A is capable of serving a variety of general-purpose applications, including surge and overload protection, protection against transient voltages, power factor correction and protection of high-speed switching devices. These diodes are also used in a variety of automotive applications such as fuel injectors and airbag sensing circuits.
In addition to their use in general-purpose applications, 1N1190A diodes are popular for their use in high-speed switching applications. Such applications include switch-mode power supplies, lighting control systems, automotive transceivers, personal computers and printer controllers. These diodes can handle rapid transition times between a low-frequency current and a high-frequency current, which is critical in today\'s increasingly complex power systems.
With its fast recovery time, low temperature operation and high switching speed, the 1N1190A single, fast recovery rectifier diode is ideally suited for a variety of general-purpose and high-speed switching applications. It can provide a variety of circuit configurations to meet the needs of any application, including full-wave, bridge and full-bridge rectification. With the right application, the 1N1190A can be a valuable addition to any device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-1N1184RA | Vishay Semic... | 4.35 $ | 4374 | DIODE GEN PURP 100V 40A D... |
VS-1N1183A | Vishay Semic... | 5.9 $ | 6906 | DIODE GEN PURP 50V 40A DO... |
1N1184A | GeneSiC Semi... | 4.6 $ | 21 | DIODE GEN PURP 100V 40A D... |
VS-1N1190RA | Vishay Semic... | 6.11 $ | 96 | DIODE GEN PURP 600V 40A D... |
1N1184 | GeneSiC Semi... | 6.9 $ | 97 | DIODE GEN PURP 100V 35A D... |
VS-1N1199A | Vishay Semic... | 3.19 $ | 29 | DIODE GEN PURP 50V 12A DO... |
VS-1N1188 | Vishay Semic... | 4.53 $ | 97 | DIODE GEN PURP 400V 35A D... |
1N1186AR | GeneSiC Semi... | 4.92 $ | 53 | DIODE GEN PURP REV 200V 4... |
VS-1N1186RA | Vishay Semic... | 5.28 $ | 63 | DIODE GEN PURP 200V 40A D... |
VS-1N1190 | Vishay Semic... | 6.01 $ | 75 | DIODE GEN PURP 600V 35A D... |
VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
1N1188R | GeneSiC Semi... | 4.91 $ | 95 | DIODE GEN PURP REV 400V 3... |
VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
1N1199A | GeneSiC Semi... | 2.07 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
1N1199AR | GeneSiC Semi... | 2.17 $ | 1000 | DIODE GEN PURP REV 50V 12... |
VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
1N1186 | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1189A | Vishay Semic... | 4.01 $ | 1000 | DIODE GEN PURP 500V 40A D... |
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