Allicdata Part #: | 1N1184ARGN-ND |
Manufacturer Part#: |
1N1184AR |
Price: | $ 3.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 100V 40A DO5 |
More Detail: | Diode Standard, Reverse Polarity 100V 40A Chassis,... |
DataSheet: | 1N1184AR Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.09563 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 40A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 200°C |
Base Part Number: | 1N1184AR |
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The 1N1184AR is a widespread single rectifier diode which functions as a method of controlling the current passing through. This component is historically notable for its frequent usage in early computing devices, as its simple construction and reliable operation were deemed practical alongside the limited technology which enabled its system\'s complex calculations and operations. Its simple design functions through allowing current to pass in one direction, a feature which is shared across all rectifier component variants, and known as a unidirectional conductance.
The 1N1184AR is most commonly used for alternating current (AC) applications, where the ability to switch the current\'s passable direction is applied selectively. As the diode is polarised, a keen understanding of the direction in which to apply the current is necessary as this will determine the direction in which the current is allowed to flow. In AC applications, the polarity of certain components, such as the AC power supply, must match the polarity of the rectifier to ensure the current will be passage in the desired direction. Furthermore, the usage of such diodes can also be applied in DC applications in order to block the reverse-current which is often contaminants in devices, as with their polarised design, they are able to assist in preventing misguided electrical pathways.
The construction of a single rectifier diode is simplistic in comparison to many digital components. It performs its role through the use of a junction which is formed between two materials. These materials are P-type and N-type, which are allowed to combine to form a fast contact between the two to produce an electrical field. As the current fed into the diode is pushed through, the potential of the charges is lower in the N-type material and higher in the P-type material. This allows for the property of unidirectional conductance whereby current is blocked from passing in the reverse direction.
The general characteristics of the 1N1184AR, as with any single rectifier diode, are widely visible across all components of its kind. When discussing the electrical characteristics, the forward voltage drop (Vf) for the 1N1184AR is typically rated between 0.8V to 0.95V, with average figures being 1V. Its average forward current (If) is specified as 1A however can sometimes reach 1.3A and should be noted as high temperature applications, above around 100oC, require prompt attention towards the intended current rating as the heat can reduce the If significantly. The reverse voltage (Vr) of the 1N1184AR can reach up to 40V which is suitable for common everyday applications.
The 1N1184AR’s application fields are various, but due to its design and components, it is generally reserved for more basic applications. These include the usage in clamping and voltage multiplication circuits, such as for the regulation of power, as well as the construction of rectifier bridges in the distinction of AC and DC. Furthermore, its applications and use can be found in numerous electrical systems, such as in voltage regulation equipment and surge suppression. Additionally, this rectifier diode is also often used for the protection of equipment against overvoltage, generally by constructing overvoltage protection circuits.
In conclusion, the 1N1184AR is a widespread single rectifier diode which functions through the property of unidirectional conductance, where current is allowed to pass in one direction. Its application fields are predominantly simple in nature, such as the regulation of power, the construction of rectifier bridges, and the protection against overvoltage. Its simplicity, accuracy, and durability have allowed it to be utilised in various electronic systems and devices across multiple decades, not just for its long-term reliability but also for its practicality within the given system\'s current technology.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-1N1184RA | Vishay Semic... | 4.35 $ | 4374 | DIODE GEN PURP 100V 40A D... |
VS-1N1183A | Vishay Semic... | 5.9 $ | 6906 | DIODE GEN PURP 50V 40A DO... |
1N1184A | GeneSiC Semi... | 4.6 $ | 21 | DIODE GEN PURP 100V 40A D... |
VS-1N1190RA | Vishay Semic... | 6.11 $ | 96 | DIODE GEN PURP 600V 40A D... |
1N1184 | GeneSiC Semi... | 6.9 $ | 97 | DIODE GEN PURP 100V 35A D... |
VS-1N1199A | Vishay Semic... | 3.19 $ | 29 | DIODE GEN PURP 50V 12A DO... |
VS-1N1188 | Vishay Semic... | 4.53 $ | 97 | DIODE GEN PURP 400V 35A D... |
1N1186AR | GeneSiC Semi... | 4.92 $ | 53 | DIODE GEN PURP REV 200V 4... |
VS-1N1186RA | Vishay Semic... | 5.28 $ | 63 | DIODE GEN PURP 200V 40A D... |
VS-1N1190 | Vishay Semic... | 6.01 $ | 75 | DIODE GEN PURP 600V 35A D... |
VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
1N1188R | GeneSiC Semi... | 4.91 $ | 95 | DIODE GEN PURP REV 400V 3... |
VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
1N1199A | GeneSiC Semi... | 2.07 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
1N1199AR | GeneSiC Semi... | 2.17 $ | 1000 | DIODE GEN PURP REV 50V 12... |
VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
1N1186 | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1189A | Vishay Semic... | 4.01 $ | 1000 | DIODE GEN PURP 500V 40A D... |
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