
Allicdata Part #: | 1N4568AUR-1-ND |
Manufacturer Part#: |
1N4568AUR-1 |
Price: | $ 6.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | ZENER DIODE |
More Detail: | Zener Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
108 +: | $ 5.71503 |
Specifications
Series: | * |
Part Status: | Active |
Description
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Introduction
The 1N4568AUR-1 is a single zener diode developed by popular electronic component manufacturer on semiconductor. It provides a consistent and minimum breakdown voltage, integrated with a wide selection of power ratings, temperatures and package specifications. Recording excellent performance and long service life, or for high voltage applications, the 1N4568AUR-1 is an ideal choice.Application Field and Working Principle
The 1N4568AUR-1 is mainly used in voltage regulation, signal processing, and other related areas. The diode is designed for medium current and high voltage applications with a series of voltage ratings from 6.2V to 75V and power ratings from 200mW to 5W. To reduce power output and provide stable performance, the rated temperature range of the 1N4568AUR-1 extends from -65 to +150°C. The product\'s strong feature of protecting sensitive circuitry while handling significant amounts of power is accompanied with its very low leakage current, typically standing at 25µA. In terms of its working principle, the 1N4568AUR-1 is a zener diode composed of a semiconductor P-N junction, meaning that when a current flows through the diode in a single direction, the current increases exponentially when applied with sufficient reverse bias. This increase in current then causes due to the breakdown of the depletion region. Since the depletion region is characterized from a potential gradient of the semiconductor, when the breakdown junction reaches a certain level of potential, an avalanche current is created allowing subsequent free electrons to rapidly cross the barrier and enter the depletion region. This, in tandem with a carefully designed thermal and electrical design, allows for an exact and consistent breakdown voltage of the diode.Characteristics and Package
The 1N4568AUR-1 allows for a wide range of breakdown voltages and power, meaning that the product can be adjusted to match a given application. A unique set of characteristics and specifications are provided:• Breakdown voltage from 6.2V to 75V • Power rating from 200mW to 5W • Maximum reverse current of 1mA • Low capacitance of 3.2pF • Maximum surge peak reverse current of 140mA • PN junction hermetic sealing for durable operation The diode is featured in a dual in-line package (DIP) configuration with a total height of 15mm and width of 8mm. This is a long-term proven design by on semiconductor and is widely mounted on PCBs. The outside surface is made of the insulating material to protect the pins from oxidation. Additionally, there is a type of insulating coating to further protect and shield the board from external environments.Conclusion
In conclusion, the 1N4568AUR-1 diode is a reliable and consistent member of the zener diode family and is ideal for various applications such as voltage regulation and signal processing. Being capable of being adjusted to various power outputs and breakdown voltages, this product delivers outstanding performance and is a valuable choice among electronic components.The specific data is subject to PDF, and the above content is for reference
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