1N457_T50R

Diodes - Rectifiers - Single

The 1N457_T50R diode is a single rectifier diode deployed in various electrical and electronic applications. It is a high-speed, low forward voltage drop diode with lower power dissipation and higher efficiency than many other rectifiers. 1N457_T50R is designed for fast switching, low forward voltage drop and higher surge or transient current capability.

Application Field

1N457_T50R diodes are used as general-purpose rectifiers in wide variety of applications such as power supplies, rectifiers, DC-DC converters, voltage multipliers, signal circuits, antenna preamps, and switching circuits.

Working Principle

The 1N457_T50R diode is a semiconductor diode composed of the semiconductor material PN-junction. It is a unidirectional device; it permits current flow in one direction only and blocks current through it in the opposite pole.

The diode consists of a PN junction with a highly Doped Anode region and a lightly Doped/Undoped Cathode region. When an external voltage is applied (Anode positive) the PN junction enters forward bias condition in which the majority charge carriers t(electrons and holes) cross the junction and thus a large current flows through the diode. The current through the diode is limited to a certain value known as saturation current, which is due to the presence of minority carriers in the junction.

When the external applied voltage is reversed across the diode (Cathode positive), the reverse voltage is applied to the junction and thus the current decreases to zero. No matter what the value of the reverse voltage is, the current in the reverse bias condition is almost zero.

1N457_T50R diodes are designed such that it offers a low forward voltage drop, whereas in the reverse bias condition it ensures a higher breakdown voltage.