1N4681UR-1

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	2.4V
Tolerance:	±5%
Power - Max:	500mW
Current - Reverse Leakage @ Vr:	2µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 100mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AA (Glass)
Supplier Device Package:	DO-213AA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

1N4681UR-1 Application Field and Working Principle

The 1N4681UR-1 is a Zener, single, low current silicon diode as part of Diodes Incorporated’s broad power management portfolio. It is designed for applications that require a sharp reverse breakdown voltage and a low dynamic impedance to support noise filtering and transient protection. This diode has a maximum power dissipation of 500mW and is offered specifically in the SOD-523F surface mount package.

Features

The ON-Semiconductor 1N4681UR-1 has several key advantages. It offers a low dynamic impedance to support noise filtering and transient protection and a Reverse voltage of 5.6V with a reverse current of 5mA. The operating junction temperature range is -55 to +150 °C, C-V3032C-U while the Storage Temperature is -55 to +150 °C. According to the datasheet, the bias current-voltage characteristic is typcially linear, with marginal variation in the Zener voltage over the specified device range.

Application Field

The 1N4681UR-1 is widely used in a variety of devices and applications. It is commonly used when low power dissipation devices are needed in order to improve system efficiency. It can also be used as a reverse bias diode or as part of a power supply design or noise filter. The device can also be used in circuits that require low noise or transient protection. It also has a low reverse leakage current, which makes it an ideal choice for applications that need reliable protection.

Working Principle

The 1N4681UR-1 Zener diode is constructed using a single PN junction. The diode is reverse biased until a certain voltage is attained, at which point the current is able to "punch through" the junction, allowing current to flow in the reverse direction. This voltage is referred to as the breakdown voltage and is one of the major characteristics of the diode.When the reverse breakdown voltage has been reached, the current then saturates at the Zener breakdown voltage. This ensures a steady voltage across the circuit, regardless of changes in measured voltage. As the current stays constant, the diode can be used as a voltage regulator to ensure that the voltage supplied to a circuit is the same regardless of fluctuations in the power grid.The 1N4681UR-1 Zener diode offers a wide range of advantages in both commercial and industrial applications. Its low current, low dynamic impedance and high surge capability make it suitable for high performance, low loss applications. It is also highly reliable and can be used in power supply designs or as a reverse bias diode to protect sensitive electronics from current overloads. In addition, its ability to provide a stable voltage across the circuit and its low reverse leakage current assures dependable protection. This, combined with its attractive price point, makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description