1N4623-1E3TR Discrete Semiconductor Products |
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Allicdata Part #: | 1N4623-1E3TR-ND |
Manufacturer Part#: |
1N4623-1E3TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 4.3V 250MW DO35 |
More Detail: | Zener Diode 4.3V 250mW ±5% Through Hole DO-35 |
DataSheet: | 1N4623-1E3TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±5% |
Power - Max: | 250mW |
Impedance (Max) (Zzt): | 1600 Ohms |
Current - Reverse Leakage @ Vr: | 4µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N4623 |
Description
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Diodes - Zener - SingleThe 1N4623-1E3TR is a Zener diode that is widely used in electronics circuits. It is a single-diode device made from a P-N junction that enables it to control voltage precisely over a wide range of currents. The main application of the 1N4623-1E3TR is in voltage regulation. It is commonly used in circuits to regulate the voltage in a circuit so that it remains constant regardless of the load or external disturbances. This feature makes the 1N4623-1E3TR suitable for many applications in telecommunication, computer, and automotive systems, as well as in industrial control systems.The 1N4623-1E3TR utilizes a P-N junction to control the voltage in a circuit. A P-N junction is made of two types of semiconductors, P-type and N-type. The P-type material has positively charged holes, whereas the N-type material is negatively charged. When these two materials come into contact with each other, a built-in field is formed across the junction. This built-in field induces an electric potential and allows electrons to flow from the N-type material to the P-type material. This flow of electrons is regulated by the external application of voltage, and this is what makes the 1N4623-1E3TR a Zener diode. When the external applied voltage is less than the built-in potential, the electron flow is blocked and the 1N4623-1E3TR functions as an open circuit. When the applied voltage is greater than the built-in potential, the electrons flow and the 1N4623-1E3TR functions as a closed circuit. The voltage at which the 1N4623-1E3TR switches from an open circuit to a closed circuit is called the breakdown voltage. The 1N4623-1E3TR is designed to have a fixed breakdown voltage of 1.3 volts. The breakdown voltage is not affected by temperature or current, which makes it extremely reliable and suitable for voltage regulation applications. The 1N4623-1E3TR is also designed to have a reverse-biasing voltage of 6 volts, ensuring that the voltage is correctly regulated even under high-voltage conditions. The 1N4623-1E3TR is also designed for low-noise operation. It is designed to minimize the noise generated by sudden changes in the control voltage, ensuring that the device does not introduce any unwanted noise into the circuit. This makes the 1N4623-1E3TR suitable for many low-noise, precision voltage regulation applications. The 1N4623-1E3TR is also extremely robust and can withstand high-voltage transients. Its robust design allows it to operate reliably under a wide range of extreme environmental conditions. This makes the 1N4623-1E3TR particularly suitable for industrial, automotive, and military applications.Overall, the 1N4623-1E3TR is a reliable, high-performance Zener diode ideal for applications requiring precise voltage regulation. Its wide operating temperature range, low-noise operation, and robust design make it a popular choice for many industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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