1N4912A Allicdata Electronics
Allicdata Part #:

1N4912A-ND

Manufacturer Part#:

1N4912A

Price: $ 16.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 12.8V 400MW DO7
More Detail: Zener Diode 12.8V 400mW ±5% Through Hole DO-7
DataSheet: 1N4912A datasheet1N4912A Datasheet/PDF
Quantity: 1000
100 +: $ 15.17590
Stock 1000Can Ship Immediately
$ 16.86
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12.8V
Tolerance: ±5%
Power - Max: 400mW
Impedance (Max) (Zzt): 25 Ohms
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Description

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A Zener diode is a two-terminal semiconductor device that, when connected in a circuit, allows current to flow in the forward direction, but when the applied voltage across the terminals reaches a certain threshold known as its breakdown or zener voltage, the current increases rapidly without a corresponding increase in voltage.

The 1N4912A diode is manufactured by Central Semiconductor, and belongs to the Zener diode family. This type of diode has two major benefits over regular diodes: it exhibits a very low reverse current, and it has very low leakage at the forward voltage. It also has a low reverse recovery time, meaning that the diode can “recover” from a short circuit at a faster rate than other types of diodes.

The 1N4912A diode is particularly useful for applications requiring low leakage current, such as power supplies and voltage regulators. It can also be used for voltage protection, voltage monitoring, and signal rectification. The diode’s breakdown voltage and leakage current also make it ideal for high-reliability designs and applications such as automotive and aerospace.

The 1N4912A diode is designed to be connected in reverse bias, which means the anode is connected to the negative side of an applied voltage while the cathode is connected to the positive side. When the device is connected in reverse bias, current is limited to a very low value, usually much lower than the breakdown voltage. When the applied voltage reaches the breakdown voltage, the current dramatically increases and sets up a condition known as avalanche breakdown.

The 1N4912A diode works by creating an electric field in the vicinity of the zener junction. This field is strong enough to cause electrons to tunnel through the junction and become trapped on the depletion region. When the electric field intensity reaches a critical level, electrons can avalanche across the diode junction, creating a high current in the reverse direction, which stops the avalanche in its tracks. The excess energy generated by the avalanche is dissipated as heat, but the breakdown voltage of the 1N4912A remains constant.

The 1N4912A diode is a popular choice for many applications because of its low forward and reverse leakage, low reverse recovery time, and ability to maintain its breakdown voltage when subjected to constant voltage stress. These characteristics make it an ideal choice for power supplies, voltage regulators, protection, monitoring, and rectification applications.

The specific data is subject to PDF, and the above content is for reference

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