Allicdata Part #: | 1N4912A-ND |
Manufacturer Part#: |
1N4912A |
Price: | $ 16.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 12.8V 400MW DO7 |
More Detail: | Zener Diode 12.8V 400mW ±5% Through Hole DO-7 |
DataSheet: | 1N4912A Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 15.17590 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12.8V |
Tolerance: | ±5% |
Power - Max: | 400mW |
Impedance (Max) (Zzt): | 25 Ohms |
Operating Temperature: | -55°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AA, DO-7, Axial |
Supplier Device Package: | DO-7 |
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A Zener diode is a two-terminal semiconductor device that, when connected in a circuit, allows current to flow in the forward direction, but when the applied voltage across the terminals reaches a certain threshold known as its breakdown or zener voltage, the current increases rapidly without a corresponding increase in voltage.
The 1N4912A diode is manufactured by Central Semiconductor, and belongs to the Zener diode family. This type of diode has two major benefits over regular diodes: it exhibits a very low reverse current, and it has very low leakage at the forward voltage. It also has a low reverse recovery time, meaning that the diode can “recover” from a short circuit at a faster rate than other types of diodes.
The 1N4912A diode is particularly useful for applications requiring low leakage current, such as power supplies and voltage regulators. It can also be used for voltage protection, voltage monitoring, and signal rectification. The diode’s breakdown voltage and leakage current also make it ideal for high-reliability designs and applications such as automotive and aerospace.
The 1N4912A diode is designed to be connected in reverse bias, which means the anode is connected to the negative side of an applied voltage while the cathode is connected to the positive side. When the device is connected in reverse bias, current is limited to a very low value, usually much lower than the breakdown voltage. When the applied voltage reaches the breakdown voltage, the current dramatically increases and sets up a condition known as avalanche breakdown.
The 1N4912A diode works by creating an electric field in the vicinity of the zener junction. This field is strong enough to cause electrons to tunnel through the junction and become trapped on the depletion region. When the electric field intensity reaches a critical level, electrons can avalanche across the diode junction, creating a high current in the reverse direction, which stops the avalanche in its tracks. The excess energy generated by the avalanche is dissipated as heat, but the breakdown voltage of the 1N4912A remains constant.
The 1N4912A diode is a popular choice for many applications because of its low forward and reverse leakage, low reverse recovery time, and ability to maintain its breakdown voltage when subjected to constant voltage stress. These characteristics make it an ideal choice for power supplies, voltage regulators, protection, monitoring, and rectification applications.
The specific data is subject to PDF, and the above content is for reference
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1N4933G | ON Semicondu... | 0.16 $ | 11479 | DIODE GEN PURP 50V 1A DO4... |
1N4935G | ON Semicondu... | 0.16 $ | 3204 | DIODE GEN PURP 200V 1A DO... |
1N4937G | ON Semicondu... | -- | 3542 | DIODE GEN PURP 600V 1A DO... |
1N4938-1 | Microsemi Co... | 3.37 $ | 272 | DIODE GEN PURP 175V 100MA... |
1N4973 | Microsemi Co... | 6.37 $ | 466 | DIODE ZENER 43V 5W EPAKZe... |
1N4971 | Microsemi Co... | 6.37 $ | 307 | DIODE ZENER 36V 5W AXIALZ... |
1N4965 | Microsemi Co... | 6.37 $ | 154 | DIODE ZENER 20V 5W AXIALZ... |
1N4954US | Microsemi Co... | 9.04 $ | 280 | DIODE ZENER 6.8V 5W D5BZe... |
1N4935RLG | ON Semicondu... | -- | 15000 | DIODE GEN PURP 200V 1A DO... |
1N4933RLG | ON Semicondu... | 0.03 $ | 10000 | DIODE GEN PURP 50V 1A DO4... |
1N4934-E3/54 | Vishay Semic... | 0.03 $ | 16500 | DIODE GEN PURP 100V 1A DO... |
1N4936-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 400V 1A DO... |
1N4942GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A DO... |
1N4937-T | Diodes Incor... | -- | 15000 | DIODE GEN PURP 600V 1A DO... |
1N4933-E3/54 | Vishay Semic... | 0.03 $ | 22000 | DIODE GEN PURP 50V 1A DO2... |
1N4961US | Microsemi Co... | 9.27 $ | 11 | DIODE ZENER 13V 5W D5BZen... |
1N4967US | Microsemi Co... | 9.42 $ | 4 | DIODE ZENER 24V 5W D5BZen... |
1N4936 TR | Central Semi... | 0.08 $ | 5000 | DIODE GEN PURP 400V 1A DO... |
1N4935-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4934G-T | Diodes Incor... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4937GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4937-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4936RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4937-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4935-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4942C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 200V 1A AX... |
1N4936-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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