1N4933GPHE3/73 Allicdata Electronics
Allicdata Part #:

1N4933GPHE3/73-ND

Manufacturer Part#:

1N4933GPHE3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 1A DO204AL
More Detail: Diode Standard 50V 1A Through Hole DO-204AL (DO-41...
DataSheet: 1N4933GPHE3/73 datasheet1N4933GPHE3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4933
Description

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The 1N4933GPHE3/73 diode is a single-phase, soft-recovery rectifier. The device has a reverse recovery time of 20ns typical and 75ns maximum. It is designed for use in high frequency dc-to-dc converters and other applications where power dissipation is limited. The 1N4933GPHE3/73 is rated for up to 33A of forward current with a maximum voltage drop of 1.6V.

The 1N4933GPHE3/73 is capable of switching frequencies up to 200kHz with a minimum duty cycle of 10%. It is designed to switch at lower frequencies up to 300kHz and is also suitable for DC bus or output rectification in DC-DC converters. It can also be used in telecom and server power supplies, high frequency inverters, medical systems, and battery charging circuits.

The working principle of the 1N4933GPHE3/73 is based on the PN junction diode. The PN junction diode consists of a highly doped N and P type semiconductor material created when they are joined in a single crystal. When a voltage is applied to the diode, it creates an electric field across the PN junction. This electric field causes electrons to migrate from the N type side to the P type side, creating a depletion zone that acts as a barrier to keep current flowing in only one direction.

When a positive voltage is applied to the 1N4933GPHE3/73 diode, current will flow in the forward direction due to the tiny potential difference across the depletion zone, thus allowing current to pass through the diode. However, when a negative voltage is applied to the diode, no current will flow due to the electric field from the negative voltage which will counter the electric field from the PN junction.

The 1N4933GPHE3/73 is therefore widely used as an effective rectifier that can be used to convert AC voltage into DC voltage and protect sensitive electronic components from power surges. It is also used in high frequency switching applications, where its fast soft recovery time, low power dissipation, and low voltage drop are particularly beneficial.

In conclusion, the 1N4933GPHE3/73 diode is a versatile and reliable rectifier diode suitable for various applications, such as telecommunications, medical systems, high frequency inverters, and battery charging circuits. Its fast reverse recovery time, low power dissipation, and low voltage drop make it excellent for use in high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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