1N4933GHR1G Allicdata Electronics
Allicdata Part #:

1N4933GHR1G-ND

Manufacturer Part#:

1N4933GHR1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 50V 1A DO204AL
More Detail: Diode Standard 50V 1A Through Hole DO-204AL (DO-41...
DataSheet: 1N4933GHR1G datasheet1N4933GHR1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02137
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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1N4933GHR1G is a rectifier diode with a nominal forward current of 3 A. It is suitable for use in switch-mode power supplies, rectification, and circuits where reverse voltage protection is necessary. 1N4933GHR1G is characterized by its low forward voltage drop, surge current capability, and reverse voltage capability.A rectifier diode is an electronic component, typically a semiconductor, that allows current to flow in only one direction. Rectifier diodes provide a structure for current to flow in the direction of the applied voltage, which is the anode, that is not hindered by the presence of the barrier, which is the cathode. A single rectifier diode is a component with just one diode, although multiple diodes can be combined to create a single component.When forward biased, a single rectifier diode is composed of three regions. A conduction channel, which is formed when electrons and holes come together when accelerated by the applied voltage, a barrier region, which is formed by the increased resistance between the two types of charges, and a depletion region, which forms when the carriers recombine and reduces the available charge carriers. This combination of regions modifies the bias of the diode and allows only current in the forward direction.When the terminal voltage reaches a certain value (known as the breakdown voltage of the diode), the reverse bias region becomes conducting, allowing current to flow in both directions. This current gain is known as the avalanche breakdown, and the voltage at which this occurs is the breakover voltage of the diode. The breakover voltage of a single rectifier diode is typically less than 1V.The general working principle of a single rectifier diode is simple. In forward biased operation, a forward voltage across the terminals causes electrons to migrate from the anode to the cathode and holes migrate from the cathode to the anode, as shown in the figure below. This flow of current from the anode to the cathode is known as a forward current.In reverse biased operation, a reverse voltage across the terminals causes electrons to migrate from the cathode to the anode and holes to migrate from the anode to the cathode. This flow of current from the cathode to the anode is known as a reverse current.The 1N4933GHR1G diode can be used in a variety of applications, such as switch-mode power supplies, rectification, and circuits that require reverse voltage protection. The device features excellent surge current capability and low forward voltage drop. The diode is packaged in a small case package that is ideal for automated placement.In summary, 1N4933GHR1G is a single rectifier diode that is suitable for use in switch-mode power supplies, rectification, and circuits where reverse voltage protection is necessary. It is characterized by its low forward voltage drop, surge current capability, and reverse voltage capability. The 1N4933GHR1G is packaged in a convenient case package that is easy to automate.

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