1N4973US Allicdata Electronics
Allicdata Part #:

1N4973USS-ND

Manufacturer Part#:

1N4973US

Price: $ 6.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: DIODE ZENER 43V 5W
More Detail: Zener Diode 43V 5W ±4.88% Surface Mount
DataSheet: 1N4973US datasheet1N4973US Datasheet/PDF
Quantity: 1000
250 +: $ 5.46497
Stock 1000Can Ship Immediately
$ 6.07
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±4.88%
Power - Max: 5W
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 32.7V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Supplier Device Package: --
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

1N4973US Application Field and Working Principle

1N4973US is one type of zener diode in single package, suitable for applications in the most common zener range of voltage, 2.4V~39V.

Application Field

1N4973US is mainly used in voltage regulation, such as low voltage, fine voltage, high voltage, etc. It is widely used in the power distribution circuit and power supply equipment for voltage regulation of the load in the circuit, such as voltage stabilizer, independent power transmission, DC-DC converter and UPS power supply, etc. In switching power supply also needs to use it to detect the output voltage and other similar occasions.

Working Principle

As an essential component in a diode, 1N4973US exhibits very specific working principle. A Zener diode is designed to have a thicker n-type semiconductor layer and a p-type anode layer, forming the junction. When a forward voltage is applied, it will allow current to flow in the connecting direction. When the reverse bias voltage is applied, the depletion region formed around the junction increases, effectively blocking the current flow, as well as reducing the potential applied to the Zener diode.

When a certain reverse bias voltage is exceeded, it results in sufficient amount of carriers to cross over from the n-type to the p-type layer, which is called as Zener breakdown. For 1N4973US, this breakdown voltage is in the range of 2.4V~39V. These carriers have sufficient energy and then impact the anode layer, exciting the electron-hole pairs, which can recombine and produce phonons (a form of energy). As a result, electromagnetic radiation occurs and it is perceived as light.

Conclusion

1N4973US diode technology is widely used in a variety of applications, such as simple voltage regulation, power distribution and power supply equipment, etc. By applying a certain reverse bias voltage to it, it forms the Zener breakdown, forming of phonons and light, which is the working principle of 1N4973US.

The specific data is subject to PDF, and the above content is for reference

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