| Allicdata Part #: | 1N4973USS-ND |
| Manufacturer Part#: |
1N4973US |
| Price: | $ 6.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Semtech Corporation |
| Short Description: | DIODE ZENER 43V 5W |
| More Detail: | Zener Diode 43V 5W ±4.88% Surface Mount |
| DataSheet: | 1N4973US Datasheet/PDF |
| Quantity: | 1000 |
| 250 +: | $ 5.46497 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 43V |
| Tolerance: | ±4.88% |
| Power - Max: | 5W |
| Impedance (Max) (Zzt): | 20 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 32.7V |
| Operating Temperature: | -55°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF |
| Supplier Device Package: | -- |
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1N4973US Application Field and Working Principle
1N4973US is one type of zener diode in single package, suitable for applications in the most common zener range of voltage, 2.4V~39V.
Application Field
1N4973US is mainly used in voltage regulation, such as low voltage, fine voltage, high voltage, etc. It is widely used in the power distribution circuit and power supply equipment for voltage regulation of the load in the circuit, such as voltage stabilizer, independent power transmission, DC-DC converter and UPS power supply, etc. In switching power supply also needs to use it to detect the output voltage and other similar occasions.
Working Principle
As an essential component in a diode, 1N4973US exhibits very specific working principle. A Zener diode is designed to have a thicker n-type semiconductor layer and a p-type anode layer, forming the junction. When a forward voltage is applied, it will allow current to flow in the connecting direction. When the reverse bias voltage is applied, the depletion region formed around the junction increases, effectively blocking the current flow, as well as reducing the potential applied to the Zener diode.
When a certain reverse bias voltage is exceeded, it results in sufficient amount of carriers to cross over from the n-type to the p-type layer, which is called as Zener breakdown. For 1N4973US, this breakdown voltage is in the range of 2.4V~39V. These carriers have sufficient energy and then impact the anode layer, exciting the electron-hole pairs, which can recombine and produce phonons (a form of energy). As a result, electromagnetic radiation occurs and it is perceived as light.
Conclusion
1N4973US diode technology is widely used in a variety of applications, such as simple voltage regulation, power distribution and power supply equipment, etc. By applying a certain reverse bias voltage to it, it forms the Zener breakdown, forming of phonons and light, which is the working principle of 1N4973US.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| 1N4934GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4979 | Microsemi Co... | 4.76 $ | 1000 | DIODE ZENER 75V 5W AXIALZ... |
| 1N4937GHA0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4933GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4934GPE-E3/91 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4923 | Microsemi Co... | 24.74 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
| 1N4934GHR1G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4947-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP FAST 1A DO-41Di... |
| 1N4936GP-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4956 | Microsemi Co... | 4.76 $ | 1000 | DIODE ZENER 8.2V 5W AXIAL... |
| 1N4959US | Semtech Corp... | 6.05 $ | 1000 | DIODE ZENER 11V 5WZener D... |
| 1N4996 | Microsemi Co... | 22.7 $ | 1000 | ZENER DIODEZener Diode |
| 1N4942C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 200V 1A AX... |
| 1N4910A | Microsemi Co... | 50.32 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
| 1N4970 | Microsemi Co... | 6.37 $ | 32 | DIODE ZENER 33V 5W AXIALZ... |
| 1N4929A | Microsemi Co... | 19.37 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
| 1N4917A | Microsemi Co... | 55.37 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
| 1N4973 | Microsemi Co... | 6.37 $ | 466 | DIODE ZENER 43V 5W EPAKZe... |
| 1N4928 | Microsemi Co... | 35.61 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
| 1N4935L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4963US | Semtech Corp... | -- | 1000 | DIODE ZENER 16V 5WZener D... |
| 1N4901 | Microsemi Co... | 29.9 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
| 1N4934GP | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4948GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N4948GPHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N4977US | Semtech Corp... | 6.07 $ | 1000 | DIODE ZENER 62V 5WZener D... |
| 1N4942-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP FAST 1A DO-41Di... |
| 1N4935GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4944 | Semtech Corp... | 4.85 $ | 1000 | DIODE ZENER AXIALZener Di... |
| 1N4944-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP FAST 1A DO-41Di... |
| 1N4970US | Microsemi Co... | 9.42 $ | 28 | DIODE ZENER 33V 5W D5BZen... |
| 1N4936G A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4933GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
| 1N4915A | Microsemi Co... | 56.76 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
| 1N4963 | Microsemi Co... | 4.76 $ | 1000 | DIODE ZENER 16V 5W AXIALZ... |
| 1N4934G A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4935GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4933GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4937-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
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1N4973US Datasheet/PDF