
Allicdata Part #: | 1N4989USS-ND |
Manufacturer Part#: |
1N4989US |
Price: | $ 6.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE ZENER 200V 5W |
More Detail: | Zener Diode 200V 5W ±5% Surface Mount |
DataSheet: | ![]() |
Quantity: | 1000 |
250 +: | $ 5.48549 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 200V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 500 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 152V |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF |
Supplier Device Package: | -- |
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The 1N4989US diode is a single zener diode with a maximum zener and maximum current ratings of 9.1 volts and 400mA respectively, with an initial zener voltage of 8.2 volts. This diode is ideal for use in a variety of applications and can be adapted for use in particular conditions.
This type of diode is a two layer, PN junction formed between two types of semiconductor material, typically silicon. The large area P-type material strip is sandwiched between two N-type contacts. The sandwich is called a junction. The N-type contact is the anode, while the P-type material is the cathode.
The 1N4989US diode has a wide range of applications, from electrical to automotive. Examples include areas such as voltage regulation, current protection and power management. It is also used for telecommunications and for voltage clamping in switching applications.
The working principle of the 1N4989US diode is simple. When a reverse voltage is applied to the diode, a strong electric field is created at the junction of the two layers. This electric field ionizes and accelerates the electrons, causing them to become free carriers, which leads to a current of electrons flowing through the diode.
When a forward voltage is applied to the diode, the electric field generated at the junction is not enough to break-down the layer of holes, meaning current can only flow through the diode if the voltage is higher than the breakdown voltage. The 1N4989US has a breakdown voltage of 9.1V, depending on temperature. So, if a voltage of 9.1V or less is applied, the current is blocked and no current passes through the diode.
The 1N4989US diode is a versatile device and can be used in a variety of applications. It is a low-cost, easy-to-use solution for voltage regulation, current protection, and power management. Its reversed voltage protection capabilities make it ideal for use in telecommunications, automotive, and industrial applications. It is also designed to handle high forward currents, so it is suitable for use in switching applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N4933GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4935GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4934GPE-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4937GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4936GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4962US | Microsemi Co... | 7.24 $ | 1000 | DIODE ZENER 15V 5W D5BZen... |
1N4936GHB0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4935-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4983 | Semtech Corp... | 5.45 $ | 1000 | DIODE ZENER 110V 5W AXIAL... |
1N4905A | Microsemi Co... | 30.65 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
1N4933GHR1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4944 | Semtech Corp... | 4.85 $ | 1000 | DIODE ZENER AXIALZener Di... |
1N4944-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP FAST 1A DO-41Di... |
1N4933G A0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4919 | Microsemi Co... | 18.15 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
1N4947GPHM3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4976 | Microsemi Co... | 4.76 $ | 1000 | DIODE ZENER 56V 5W AXIALZ... |
1N4900 | Microsemi Co... | 15.56 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
1N4947GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4989US | Semtech Corp... | 6.1 $ | 1000 | DIODE ZENER 200V 5WZener ... |
1N4922 | Microsemi Co... | 12.37 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
1N4925 | Microsemi Co... | 12.37 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
1N4901A | Microsemi Co... | 30.16 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
1N4936RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4987 | Semtech Corp... | 5.45 $ | 1000 | DIODE ZENER 160V 5W AXIAL... |
1N4908A | Microsemi Co... | 16.14 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
1N4935G R1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4936G-T | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4934GPEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4942GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4900A | Microsemi Co... | 15.93 $ | 1000 | DIODE ZENER 12.8V 400MW D... |
1N4937-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4978US | Semtech Corp... | 6.03 $ | 1000 | DIODE ZENER 68V 5WZener D... |
1N4918 | Microsemi Co... | 47.54 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
1N4917 | Microsemi Co... | 53.78 $ | 1000 | DIODE ZENER 19.2V 500MW D... |
1N4936 BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4965 | Microsemi Co... | 6.37 $ | 154 | DIODE ZENER 20V 5W AXIALZ... |
1N4936G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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