1N4989US Allicdata Electronics
Allicdata Part #:

1N4989USS-ND

Manufacturer Part#:

1N4989US

Price: $ 6.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: DIODE ZENER 200V 5W
More Detail: Zener Diode 200V 5W ±5% Surface Mount
DataSheet: 1N4989US datasheet1N4989US Datasheet/PDF
Quantity: 1000
250 +: $ 5.48549
Stock 1000Can Ship Immediately
$ 6.1
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 200V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 500 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 152V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Supplier Device Package: --
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N4989US diode is a single zener diode with a maximum zener and maximum current ratings of 9.1 volts and 400mA respectively, with an initial zener voltage of 8.2 volts. This diode is ideal for use in a variety of applications and can be adapted for use in particular conditions.

This type of diode is a two layer, PN junction formed between two types of semiconductor material, typically silicon. The large area P-type material strip is sandwiched between two N-type contacts. The sandwich is called a junction. The N-type contact is the anode, while the P-type material is the cathode.

The 1N4989US diode has a wide range of applications, from electrical to automotive. Examples include areas such as voltage regulation, current protection and power management. It is also used for telecommunications and for voltage clamping in switching applications.

The working principle of the 1N4989US diode is simple. When a reverse voltage is applied to the diode, a strong electric field is created at the junction of the two layers. This electric field ionizes and accelerates the electrons, causing them to become free carriers, which leads to a current of electrons flowing through the diode.

When a forward voltage is applied to the diode, the electric field generated at the junction is not enough to break-down the layer of holes, meaning current can only flow through the diode if the voltage is higher than the breakdown voltage. The 1N4989US has a breakdown voltage of 9.1V, depending on temperature. So, if a voltage of 9.1V or less is applied, the current is blocked and no current passes through the diode.

The 1N4989US diode is a versatile device and can be used in a variety of applications. It is a low-cost, easy-to-use solution for voltage regulation, current protection, and power management. Its reversed voltage protection capabilities make it ideal for use in telecommunications, automotive, and industrial applications. It is also designed to handle high forward currents, so it is suitable for use in switching applications.

The specific data is subject to PDF, and the above content is for reference

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