Allicdata Part #: | 1N4996US-ND |
Manufacturer Part#: |
1N4996US |
Price: | $ 32.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 390V 5W D5B |
More Detail: | Zener Diode 390V 5W ±5% Surface Mount D-5B |
DataSheet: | 1N4996US Datasheet/PDF |
Quantity: | 65 |
1 +: | $ 29.18790 |
10 +: | $ 27.29410 |
25 +: | $ 25.24280 |
100 +: | $ 23.66520 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 390V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 1800 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 297V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | D-5B |
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1N4996US Application Field and Working Principle
1N4996US (Diodes - Zener - Single) is a kind of power semiconductor device. These devices are widely applied in many industrial, telecommunications and consumer electronic fields. They are also used in many consumer electronic devices such as LEDs, LCDs, etc. In addition, they are very reliable in operation and can be used in various applications with greater reliability.
Applications for 1N4996US
1N4996US is widely used in a variety of applications and is especially useful in areas where voltage regulation is required. It can be particularly useful for the protection of sensitive electronic equipment. For example, it can be used to prevent voltage overshoots and surges that are commonly experienced in power systems. In addition, it can protect electronic components and circuits against electrostatic discharge. It can also be used to reduce heat dissipations in the system and improve the efficiency of the entire system.
Other applications for 1N4996US include motor control, switch mode power supplies, UPS systems, AC-DC power supplies, as well as battery control, over-voltage control, voltage clamps, and transient protection. All of these applications require very reliable and efficient devices that provide protection from over-voltage and over-current conditions. 1N4996US provide this protection but also offer excellent overall performance of the devices.
Working Principle for 1N4996US
1N4996US are basically three terminal devices which allow current to flow in either direction. They are basically two diodes connected in opposite direction to form a bridge rectifier, which simply means that in both forward and reverse biased conditions, current can flow in either direction. This phenomenon is known as "dual polarity".
The main functioning of these diodes is to provide the necessary reverse protection. In both directions, the current will try to flow to its anode and will be stopped if the cathode voltage is higher than the anode voltage. The PN junction make sure that in reverse biased condition the device will not get clamped by the over voltage.
In addition, 1N4996US also has the capability to conduct large currents with very low resistance and its low junction capacitance ensures that it can operate at high switching speed. Additionally, the devices have a uniform breakdown voltage which ensures that the current flows in both directions in the same way. Overall, these characteristics make 1N4996US an ideal choice for applications that require reliable devices with good performance.
Conclusion
The 1N4996US is a useful device that is suitable for a variety of applications. It features dual polarity, low power consumption, low junction capacitance, and high switching speed. It also has a low forward voltage drop, which makes it suitable for power electronic applications. With its many great features, 1N4996US is an ideal device for a wide range of industrial, telecommunications, and consumer electronic applications.
The specific data is subject to PDF, and the above content is for reference
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1N4935RLG | ON Semicondu... | -- | 15000 | DIODE GEN PURP 200V 1A DO... |
1N4933RLG | ON Semicondu... | 0.03 $ | 10000 | DIODE GEN PURP 50V 1A DO4... |
1N4934-E3/54 | Vishay Semic... | 0.03 $ | 16500 | DIODE GEN PURP 100V 1A DO... |
1N4936-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 400V 1A DO... |
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1N4937-T | Diodes Incor... | -- | 15000 | DIODE GEN PURP 600V 1A DO... |
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1N4935-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4934G-T | Diodes Incor... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4937GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4937-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4936RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4937-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4935-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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