Allicdata Part #: | 1N5059TR-ND |
Manufacturer Part#: |
1N5059TR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 200V 2A SOD57 |
More Detail: | Diode Avalanche 200V 2A Through Hole SOD-57 |
DataSheet: | 1N5059TR Datasheet/PDF |
Quantity: | 15000 |
5000 +: | $ 0.10551 |
10000 +: | $ 0.09824 |
25000 +: | $ 0.09702 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 40pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | SOD-57, Axial |
Supplier Device Package: | SOD-57 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | 1N5059 |
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1N5059TR application field and working principle
The 1N5059TR is a rectifier diode made by ON Semiconductor. It is typically used as an avalanche rectifier, with an application field in power management systems and portable device applications.
Overview
The 1N5059TR is a small-signal rectifier diode. It is a 2-pin, PN junction diode with a glass case to protect the diode from damage. This diode has a maximum reverse voltage of 600 Volts and a maximum forward current of 5 Amps. The maximum repetitive reverse voltage (VRRM) is 600 Volts and the maximum surge reverse voltage (VRSM) is also 600 Volts. The FWHM temperature range is –65°C to +175°C. The forward voltage drop of this diode is 1.7V max @ 5 A.
Avalanche Rectifier
The 1N5059TR is designed to be an avalanche rectifier, which means it can withstand high-voltage spikes without suffering damage. It is an ideal tool for smoothing out voltage spikes and powering portable devices. The avalanche rectifier is used in applications such as power management systems, such as voltage regulators, buck converters, switch-mode power supplies (SMPS), and DC/DC converters. It is also used for LED lighting, appliances, and other electronic components.
Working Principle
The working principle of a rectifier diode is based on the PN junction. When a voltage is applied across the diode, the depletion region expands, allowing current to flow. This allows current to flow in only one direction and prevents current from flowing in the reverse direction. The 1N5059TR is a low-power avalanche rectifier. This means the device is designed to be able to handle large voltage spikes without damage by creating an avalanche effect. When an avalanche rectifier is subjected to a large voltage spike, its avalanche breakdown mechanism lowers the device\'s breakdown voltage, allowing current to flow.
The 1N5059TR has a low forward IF rating and a low forward IR rating, meaning that it can handle a low forward current and a low reverse current respectively. This makes the 1N5059TR well-suited for power management applications. In addition, the 1N5059TR has a low forward voltage drop, making it an efficient and cost-effective rectifier.
Conclusion
The 1N5059TR is a rectifier diode made by ON Semiconductor. It is designed to be an avalanche rectifier, making it an ideal tool for handling large voltage spikes, while also providing a low forward voltage drop and low forward and reverse current ratings. The 1N5059TR is used in a variety of applications, such as power management systems, LED lighting, and other electronic components, making it a versatile and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5060TR | Vishay Semic... | -- | 25000 | DIODE AVALANCHE 400V 2A S... |
1N5059TR | Vishay Semic... | 0.12 $ | 15000 | DIODE AVALANCHE 200V 2A S... |
1N5061TR | Vishay Semic... | 0.13 $ | 30000 | DIODE AVALANCHE 600V 2A S... |
1N5062TAP | Vishay Semic... | 0.13 $ | 20000 | DIODE AVALANCHE 800V 2A S... |
1N5059GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 400V 1A GP... |
1N5061 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 600V 1A GP... |
1N5061GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 800V 2A S... |
1N5060GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5061GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A S... |
1N5060TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 400V 2A S... |
1N5061TAP | Vishay Semic... | 0.12 $ | 1000 | DIODE AVALANCHE 600V 2A S... |
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